BU2520DX

Manufacturer Part NumberBU2520DX
DescriptionSilicon Diffused Power Transistor
ManufacturerPhilips Semiconductors
BU2520DX datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
V
Diode forward voltage
F
t
Fall time
f
PINNING - SOT399
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
-I
Reverse base current
B(AV)
-I
Reverse base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to heatsink
th j-hs
R
Junction to ambient
th j-a
1 Turn-off current.
September 1997
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
I
= 6.0 A; I
= 1.2 A
C
B
I
= 6.0 A
F
I
= 6.0 A; I
= 1.0 A
Csat
B(end)
PIN CONFIGURATION
case
1 2 3
CONDITIONS
V
= 0 V
BE
average over any 20 ms period
1
T
25 ˚C
hs
CONDITIONS
with heatsink compound
in free air
1
Product specification
BU2520DX
TYP.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
45
W
-
5.0
V
6
-
A
-
2.2
V
0.35
0.5
s
SYMBOL
c
b
Rbe
e
MIN.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
6
A
-
9
A
-
150
mA
-
6
A
-
45
W
-55
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
2.8
K/W
35
-
K/W
Rev 2.300

BU2520DX Summary of contents

  • Page 1

    ... 1.0 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2520DX TYP. MAX. UNIT - 1500 V - 800 5 2.2 V 0.35 ...

  • Page 2

    ... CONDITIONS MHz 6 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520DX MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13.5 ...

  • Page 3

    ... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1.0 adjust for ICsat 0.9 0.8 0.7 Lc 0.6 0.5 0.4 0.3 Cfb 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU2520DX hFE 125 parameter V CE VBESAT / 125 C IC/IB sat = parameter I ...

  • Page 4

    ... Fig.11. Normalised power dissipation. C Zth / (K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0. 0.001 1E- 85˚C Fig.12. Transient thermal impedance Product specification BU2520DX parameter 85˚ kHz Normalised Power Derating with heatsink compound 100 120 140 Ths / C ...

  • Page 5

    ... Fig.13. Forward bias safe operating area & f single pulse; parameter t CDC Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 BU2520AF 100 1000 VCE / ˚ Product specification BU2520DX Rev 2.300 ...

  • Page 6

    ... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU2520DX 5.8 max 3.0 3 0.95 max 3.3 Rev 2.300 ...

  • Page 7

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520DX Rev 2.300 ...