BU2520DX Philips Semiconductors, BU2520DX Datasheet - Page 3

• Manufacturer Part Number: BU2520DX
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
IBend
-VBB
Fig.1. Switching times waveforms (16 kHz).
VCE
IC
IB
IC
IB
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit .
DIODE
20us
LB
IBend
TRANSISTOR
ts
64us
26us
D.U.T.
Rbe
tf
10 %
90 %
ICsat
+ 150 v nominal
adjust for ICsat
Lc
- IBM
Cfb
IBend
ICsat
t
t
t
t
t
3
Fig.6. Typical collector-emitter saturation voltage.
Fig.5. Typical base-emitter saturation voltage.
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
Fig.4. Typical DC current gain. h
0
1
0.1
0.1
0.1
VBESAT / V
VCESAT / V
hFE
V
V
CE
BE
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
parameter V
IC/IB =
1 V
1
1
5
4
3
C
C
); parameter I
); parameter I
IC / A
IC / A
IC / A
5 V
1
CE
10
10
Product specification
BU2520DX
C
C
FE
/I
/I
Tj = 25 C
Tj = 125 C
B
B
IC/IB=
= f (I
3
4
5
Rev 2.300
C
100
100
)
10