STD7NS20 ST Microelectronics, Inc., STD7NS20 Datasheet

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STD7NS20

Manufacturer Part Number
STD7NS20
Description
N-channel 200V - 0.35 Ohm - 7A - Dpak/ipak Mesh Overlay MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
June 2003
STD7NS20
STD7NS20-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
Symbol
dv/dt (1)
I
V
DM
P
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
j
( )
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.35
200 V
200 V
V
DSS
N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK
< 0.40
< 0.40
R
DS(on)
C
GS
Parameter
= 25°C
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
7 A
7 A
I
D
(1) I
MESH OVERLAY™ MOSFET
SD
INTERNAL SCHEMATIC DIAGRAM
7A, di/dt 300 A/ s, V
TO-252
DPAK
1
3
–65 to 150
DD
STD7NS20-1
Value
± 20
0.37
200
200
150
4.4
28
45
V
7
5
(BR)DSS
STD7NS20
PRELIMINARY DATA
, Tj T
TO-251
IPAK
jMAX
1
2
3
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
1/8

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STD7NS20 Summary of contents

Page 1

... MESH OVERLAY™ MOSFET R I DS(on) D < 0. < 0. Parameter = 25° 100° 25° STD7NS20 STD7NS20-1 PRELIMINARY DATA 3 1 DPAK IPAK TO-252 TO-251 INTERNAL SCHEMATIC DIAGRAM Value 200 200 ± 4 0.37 5 –65 to 150 150 7A, di/dt 300 ...

Page 2

... STD7NS20 / STD7NS20-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... 10V G GS (see test circuit, Figure 5) Test Conditions di/dt = 100A/µ 50V 150° (see test circuit, Figure 5) STD7NS20 / STD7NS20-1 Min. Typ. Max. Unit 7 Min. Typ. Max. Unit 12 ns ...

Page 4

... STD7NS20 / STD7NS20-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 STD7NS20 / STD7NS20-1 inch MAX. MIN. TYP. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.031 1.00 0.024 MAX. 0.094 0.043 0.009 0.035 ...

Page 6

... STD7NS20 / STD7NS20-1 DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 6/8 TO-251 (IPAK) MECHANICAL DATA mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 0 inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.027 0.051 0.025 0.031 0.204 0.212 0.033 0.012 0.037 0.017 0.023 0.019 ...

Page 7

... P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 * on sales type TUBE SHIPMENT (no suffix)* MAX. 0.476 0.641 STD7NS20 / STD7NS20-1 All dimensions are in millimeters REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A 330 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 ...

Page 8

... STD7NS20 / STD7NS20-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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