MCP1650R-E/UN Microchip Technology, MCP1650R-E/UN Datasheet - Page 18

• Manufacturer Part Number: MCP1650R-E/UN
• Description: 750 kHz Boost Controller
• Manufacturer: Microchip Technology

MCP1650/51/52/53
To
Discontinuous Operating mode, multiply the energy
going into the inductor every switching cycle by the
number of cycles per second (switching frequency).
This number must be greater than the maximum input
power.
The equation for the energy flowing into the inductor is
given below. The input power to the system is equal to
energy times time.
The inductor peak current is calculated using the
equation below:
Using a typical inductance of 3.3 µH, the peak current
in the inductor is calculated below:
At 3.8V and below, the converter can boost to 14V
while operating in the Continuous mode.
For this example, a 3.3 µH inductor is too large, a
2.2 µH inductor is selected.
As the inductance is lowered, the peak current drawn
from the input at all loads is increased. The best choice
of inductance for high boost ratios is the maximum
inductance
discontinuous operation.
For lower boost-ratio applications (3.3V to 5.0V), a
3.3 µH inductor or larger is recommended. In these
cases, the inductor operates in Continuous Current
mode.
DS21876A-page 18
Energy (2.8V) = 1.35 µ-Joules
Power (2.8V) = 1.01 Watts
Energy at 3.8V = 1.22 µ-Joules
Energy at 3.8V = 1.83 µ-Joules
Energy (2.8V) = 2.02 µ-Joules
Power (2.8V) = 1.52 Watts
I
determine
PK
I
I
PK
PK
I
PK
(2.8V) = 905 mA
F
Power = 0.914 Watts
Power = 1.4 Watts
T
(3.8V) = 860 mA
(2.8V) = 1.36A
(3.8V) = 1.29A
SW
ON
F
T
value
SW
ON
Energy
= 750 kHz
= (1/F
the
I
= 750 kHz
= (1/F
PK
necessary
=
SW
maximum
=
V
--------
SW
L
IN
1
-- -
2
* Duty Cycle)
* Duty Cycle)
L
T
ON
I
while
2
PK
inductance
maintaining
for
5.2.2
There are a couple of key consideration’s when
selecting the proper MOSFET for the boost design. A
low
recommended.
5.2.2.1
1.
2.
Selecting MOSFETs with lower R
better or more efficient. Lower R
in higher total gate charge and input capacitance, slow-
ing the transition time of the MOSFET and resulting in
increased switching losses.
5.2.3
The external boost diode also switches on and off at the
switching frequency and requires very fast turn-on and
turn-off times. For most applications, Schottky diodes
are recommended. The voltage rating of the Schottky
diode must be rated for maximum boost output voltage.
For example, 12V output boost converter, the diode
should be rated for 12V plus margin. A 20V or 30V
Schottky diode is recommended for a 12V output appli-
cation. Schottky diodes also have low forward-drop
characteristics, another desired feature for switching
power supply applications.
IRLM2502 N-channel MOSFET
R
R
V
DSON
DSON
V
Voltage Rating - The MOSFET drain-to-source
voltage must be rated for a minimum of V
V
the 12V output converter, a MOSFET drain-to-
source voltage rating of 12V + 0.5V is
necessary. Typically, a 20V part can be used for
12V outputs.
Logic-Level R
significant current during the boost cycle on
time. During this time, the peak current in the
MOSFET can get quite high. In this example, a
SOT-23 MOSFET was used with the following
ratings:
BDS
Q
GS
R
FD
G
DSON
of the external boost diode. For example, in
= 20V (Drain Source Breakdown
= 50 milli-ohms (V
= 35 milli-ohms (V
= Total Gate Charge = 8 nC
= 0.6V to 1.2V (Gate Source Threshold
MOSFET SELECTION
DIODE SELECTION
Voltage)
Voltage)
MOSFET Selection Process.
logic-level
DSON
2004 Microchip Technology Inc.
- The MOSFET carries
N-channel
GS
GS
= 2.5V)
= 5.0V)
DSON
DSON
typically results
MOSFET
is not always
OUT
+
is