MCP1650R-E/UN Microchip Technology, MCP1650R-E/UN Datasheet - Page 6

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MCP1650R-E/UN

Manufacturer Part Number
MCP1650R-E/UN
Description
750 kHz Boost Controller
Manufacturer
Microchip Technology
Datasheet
MCP1650/51/52/53
DC CHARACTERISTICS (CONTINUED)
TEMPERATURE SPECIFICATIONS
DS21876A-page 6
Electrical Specifications: Unless otherwise noted, all parameters apply at V
T
Shutdown Input
Logic High Input
Logic Low Input
Input Leakage Current
Low Battery Detect (MCP1651/MCP1653 Only)
Low Battery Threshold
Low Battery Threshold
Hysteresis
Low Battery Input Leakage
Current
Low Battery Output Voltage
Low Battery Output Leakage
Current
Time Delay from LBI to LBO
Power Good Output (MCP1652/MCP1653 Only)
Power Good Threshold Low
Power Good Threshold High
Power Good Threshold
Hysteresis
Power Good Output Voltage
Time Delay from V
regulation to Power Good
Output transition
Electrical Specifications: Unless otherwise noted, all parameters apply at V
T
Temperature Ranges
Storage Temperature Range
Operating Junction Temperature
Range
Thermal Package Resistances
Thermal Resistance, MSOP-8
Thermal Resistance, MSOP-10
A
J
= -40°C to +125°C. Typical values apply for V
= -40°C to +125°C. Typical values apply for V
Parameters
Parameters
FB
out of
V
LBI
V
V
V
PGTH-HYS
V
V
T
T
I
LBI
IN-HIGH
PGTH-H
V
PGTH-L
PGOUT
Sym
SHDN
D_LBO
IN-Low
I
D_PG
I
LBO
THHYS
LBI
LBO
TH
Sym
T
T
JA
JA
A
J
1.18
Min
+10
IN
-20
IN
50
95
Min
= 3.3V, T
= 3.3V, T
-40
-40
1.22
0.01
Typ
+15
123
-15
10
53
70
53
85
5
5
Typ
208
113
A
A
= +25°C.
+25°C.
Max
1.26
100
145
200
+20
200
-10
15
1
+125
+125
Max
% of V
% of V
Units
mV
mV
mV
nA
nA
µA
Units
µs
µs
°C/W Single-Layer SEMI G42-88
°C/W 4-Layer JC51-7 Standard Board,
%
%
%
V
IN
°C
°C
IN
IN
IN
= +2.7V to +5.5V, SHDN = High,
= +2.7V to +5.5V, SHDN = High,
SHDN=V
LBI Input falling (All Conditions)
V
I
V
L
L
Referenced to Feedback Voltage
Referenced to Feedback Voltage
Referenced to Feedback Voltage
(Both Low and High Thresholds)
I
V
V
Continuous
Board, Natural Convection
Natural Convection
LB
PG
BI
BITH
LBI
LBI
FB
FBTH
SINK = 3.2 mA, V
Transitions from
SINK = 3.2 mA, V
Transitions from
= 2.5V
= 5.5V, V
+ 0.1V to L
2004 Microchip Technology Inc.
+ 0.1V to V
IN
Conditions
Conditions
LBO
BITH
FBTH
= 5.5V
LBI
FB
- 0.1V
= 0V
-0.1V
= 0V

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