MCP602

Manufacturer Part NumberMCP602
DescriptionMCP601-2-3-4
ManufacturerN/A
MCP602 datasheet
 


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AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
V
V
/2, R
= 100 k to V
/2,and C
OUT
DD
L
DD
Parameters
Frequency Response
Gain Bandwidth Product
GBWP
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
MCP603 CHIP SELECT CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
V
V
/2, R
= 100 k to V
/2, and C
OUT
DD
L
DD
Parameters
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
Shutdown V
current
SS
Amplifier Output Leakage in Shutdown
CS Threshold Hysteresis
Timing
CS Low to Amplifier Output Turn-on
Time
CS High to Amplifier Output High-Z Time
CS
t
ON
V
Hi-Z
Output Active
OUT
I
2 nA (typ.)
230 µA (typ.)
DD
I
-700 nA (typ.)
-230 µA (typ.)
SS
CS
2 nA (typ.)
700 nA (typ.)
Current
FIGURE 1-1:
MCP603 Chip Select (CS)
timing diagram.
2003 Microchip Technology Inc.
= +25°C, V
= +2.7V to +5.5V, V
A
DD
= 50 pF.
L
Sym
Min
Typ
Max
Units
2.8
MHz
PM
50
°
SR
2.3
V/µs
t
4.5
µs
settle
E
7
µV
ni
P-P
e
29
nV/ Hz f = 1 kHz
ni
e
21
nV/ Hz f = 10 kHz
ni
i
0.6
fA/ Hz f = 1 kHz
ni
= +25°C, V
= +2.7V to +5.5V, V
A
DD
= 50 pF.
L
Sym
Min
Typ
Max
Units
V
V
0.2 V
IL
SS
DD
I
-1.0
CSL
V
0.8 V
V
IH
DD
DD
I
0.7
2.0
CSH
I
-2.0
-0.7
Q_SHDN
I
1
O_SHDN
HYST
0.3
t
3.1
10
ON
t
100
OFF
t
OFF
Hi-Z
MCP601/2/3/4
= GND, V
= V
/2,
SS
CM
DD
Conditions
G = +1 V/V
G = +1 V/V
G = +1 V/V, 3.8V step
f = 0.1 Hz to 10 Hz
= GND, V
= V
/2,
SS
CM
DD
Conditions
V
µA
CS = 0.2V
DD
V
µA
CS = V
DD
µA
CS = V
DD
nA
V
Internal switch
µs
CS
0.2V
, G = +1 V/V
DD
ns
CS
0.8V
, G = +1 V/V, No Load
DD
DS21314E-page 3