MCP602 N/A, MCP602 Datasheet - Page 3

• Manufacturer Part Number: MCP602
• Description: MCP601-2-3-4
• Manufacturer: N/A

AC CHARACTERISTICS
MCP603 CHIP SELECT CHARACTERISTICS
FIGURE 1-1:
timing diagram.
Electrical Specifications: Unless otherwise indicated, T
V
Frequency Response
Gain Bandwidth Product
Phase Margin
Step Response
Slew Rate
Settling Time (0.01%)
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, T
V
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
Shutdown V
Amplifier Output Leakage in Shutdown
CS Threshold Hysteresis
Timing
CS Low to Amplifier Output Turn-on
Time
CS High to Amplifier Output High-Z Time
Current
OUT
OUT
2003 Microchip Technology Inc.
V
OUT
I
CS
I
CS
DD
SS
V
V
DD
DD
/2, R
/2, R
SS
Parameters
-700 nA (typ.)
Parameters
700 nA (typ.)
current
2 nA (typ.)
L
L
= 100 k to V
= 100 k to V
Hi-Z
MCP603 Chip Select (CS)
t
ON
DD
DD
Output Active
-230 µA (typ.)
230 µA (typ.)
2 nA (typ.)
/2,and C
/2, and C
GBWP
Sym
t
settle
PM
SR
E
e
e
L
i
I
I
ni
L
Q_SHDN
O_SHDN
ni
ni
ni
HYST
= 50 pF.
Sym
I
I
t
= 50 pF.
t
V
V
CSH
OFF
CSL
ON
t
IH
IL
OFF
Hi-Z
Min
—
—
—
—
—
—
—
—
0.8 V
A
A
V
-1.0
-2.0
Min
—
—
—
—
—
SS
= +25°C, V
= +25°C, V
DD
Typ
2.8
2.3
4.5
0.6
50
29
21
7
-0.7
100
Typ
0.7
0.3
3.1
—
—
—
1
DD
DD
= +2.7V to +5.5V, V
= +2.7V to +5.5V, V
Max
0.2 V
—
—
—
—
—
—
—
—
V
Max
2.0
10
—
—
—
—
—
DD
DD
nV/ Hz f = 1 kHz
nV/ Hz f = 10 kHz
fA/ Hz f = 1 kHz
Units
µV
MHz
V/µs
µs
°
Units
P-P
µA
µA
µA
nA
µs
ns
V
V
V
G = +1 V/V
G = +1 V/V
G = +1 V/V, 3.8V step
f = 0.1 Hz to 10 Hz
MCP601/2/3/4
SS
SS
CS = 0.2V
CS = V
CS = V
Internal switch
CS
CS
= GND, V
= GND, V
0.2V
0.8V
DD
DD
DD
DD
DD
Conditions
CM
CM
, G = +1 V/V
, G = +1 V/V, No Load
Conditions
= V
= V
DD
DD
DS21314E-page 3
/2,
/2,