2SJ493 NEC, 2SJ493 Datasheet

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2SJ493

Manufacturer Part Number
2SJ493
Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
DESCRIPTION
designed for high current switching applications.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. f = 20 kHz, Duty Cycle
Channel to Case
Channel to Ambient
This product is P-Channel MOS Field Effect Transistor
Super low on-state resistance
R
R
Low C
Built-in gate protection diode
DS(on)1
DS(on)2
2. PW
3. Starting T
iss
D11265EJ3V0DS00 (3rd edition)
January 1999 NS CP(K)
= 100 m
= 185 m
: C
iss
= 1210 pF (TYP.)
10 s, Duty Cycle
ch
(MAX.) (V
(MAX.) (V
Note2
= 25 °C, R
Note3
Note3
DS
DS
C
A
GS
The information in this document is subject to change without notice.
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= 0 V)
GS
GS
A
= –10 V, I
= –4 V, I
P-CHANNEL POWER MOS FET
= 25 , V
10% (+Side)
Note1
1 %
A
D
= 25°C)
D
GS
= –8 A)
INDUSTRIAL USE
V
V
= –8 A)
R
R
I
I
D(pulse)
GSS(AC)
GSS(DC)
V
= –20 V
th(ch-C)
th(ch-A)
DATA SHEET
D(DC)
T
E
T
I
P
P
DSS
AS
stg
AS
SWITCHING
ch
T
T
0
–55 to +150
MOS FIELD EFFECT TRANSISTOR
–20, 0
25.6
4.17
62.5
–60
#
#
#
150
–16
2.0
30
ORDERING INFORMATION
20
16
64
PART NUMBER
2SJ493
°C/W
°C/W
mJ
°C
°C
W
W
V
V
V
A
A
A
Isolated TO-220
PACKAGE
2SJ493
©
1999

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2SJ493 Summary of contents

Page 1

... DSS # V 20 GSS(AC) Note1 V –20, 0 GSS(DC D(DC D(pulse 2 150 ch T –55 to +150 stg I – 25.6 AS 10% (+Side – 4.17 th(ch-C) R 62.5 th(ch-A) 2SJ493 PACKAGE 2SJ493 Isolated TO-220 °C ° °C/W °C/W © 1999 ...

Page 2

... di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1 % Data Sheet D11265EJ3V0DS00 2SJ493 MIN. TYP. MAX. UNIT 70 100 m 120 185 m –1.0 –1.5 –2 – 1210 pF 520 pF 180 pF 15 ...

Page 3

... I D(pulse 100 Pulsed Data Sheet D11265EJ3V0DS00 2SJ493 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 120 140 160 T - Case Temperature - C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 Pulsed 0.2 0.1 10 100 0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 2.0 1.5 1.0 0.5 0 100 50 Data Sheet D11265EJ3V0DS00 2SJ493 R = 62.5 ˚C/W th(ch- 4.17 ˚C/W th(ch-c) Single Pulse 10 100 1000 Pulsed Gate to Source Voltage - ...

Page 5

... C rss 10 t d(on) 1.0 100 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Data Sheet D11265EJ3V0DS00 2SJ493 Pulsed 100 - Drain Current - ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D11265EJ3V0DS00 2SJ493 V = – – < = – 100 125 150 ...

Page 7

... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 0.2 ± 2.7 0.2 ± 2.5 0.1 ± 0.1 ± Data Sheet D11265EJ3V0DS00 2SJ493 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Source Diode 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SJ493 M4 96. 5 ...

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