2SJ600 NEC, 2SJ600 Datasheet
2SJ600
Manufacturer Part Number
2SJ600
Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.2SJ600.pdf
(4 pages)
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Document No.
Date Published
Printed in Japan
for solenoid, motor and lamp driver.
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The 2SJ600 is P-channel MOS Field Effect Transistor designed
Low on-state resistance:
R
R
Low C
Built-in gate protection diode
TO-251/TO-252 package
DS(on)1
DS(on)2
2. Starting T
iss
D14645EJ1V0DS00 (1st edition)
November 2000 NS CP(K)
= 50 m
= 79 m
: C
iss
= 1900 pF TYP.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty cycle
MAX. (V
MAX. (V
ch
Note1
C
= 25°C, R
= 25°C)
Note2
A
Note2
DS
C
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= –10 V, I
= –4.0 V, I
G
PRELIMINARY DATA SHEET
P-CHANNEL POWER MOS FET
= 25
1%
D
D
, V
A
= –13 A)
= –13 A)
= 25°C)
GS
INDUSTRIAL USE
I
D(pulse)
I
V
V
D(DC)
T
E
T
I
P
P
= –20 V
DSS
GSS
AS
stg
AS
ch
T
T
SWITCHING
–55 to +150
0 V
62.5
MOS FIELD EFFECT TRANSISTOR
–60
150
–25
+
+
+
1.0
45
20
25
70
ORDERING INFORMATION
mJ
W
W
°C
°C
V
V
A
A
A
PART NUMBER
2SJ600-Z
2SJ600
(TO-251)
(TO-252)
PACKAGE
2SJ600
©
TO-251
TO-252
2000
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