FLL357ME Fujitsu Microelectronics, FLL357ME Datasheet
FLL357ME
Manufacturer Part Number
FLL357ME
Description
L-band Medium & High Power GAAS Fets
Manufacturer
Fujitsu Microelectronics
Datasheet
1.FLL357ME.pdf
(4 pages)
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CASE STYLE: ME
Edition 1.1
July 1999
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
FEATURES
• High Output Power: P 1dB =35.5dBm (Typ.)
• High Gain: G 1dB =11.5dB (Typ.)
• High PAE: η add =46% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL357ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
1. The drain-source operating voltage (V DS ) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145°C.
gate resistance of 100Ω.
Item
Item
Symbol
V GSO
G 1dB
I DSS
P 1dB
η add
Symbol
g m
R th
V p
V GS
V DS
T stg
P tot
T ch
V DS = 5V, V GS = 0V
V DS = 5V, I DS = 800mA
V DS = 5V, I DS = 60mA
I GS = -60µA
V DS = 10V
I DS ≈ 0.6I DSS (Typ.),
f = 2.3GHz
Channel to Case
L-Band Medium & High Power GaAs FET
Test Conditions
1
Condition
T c = 25°C
Min.
34.5
10.5
-1.0
-5
-
-
-
-
-65 to +175
Rating
Limit
1200 1800
Typ.
35.5
11.5
175
-2.0
600
15
15
7.5
-5
46
FLL357ME
-
G.C.P.: Gain Compression Point
Max.
-3.5
10
-
-
-
-
-
www.DataSheet4U.com
°C/W
dBm
Unit
Unit
mA
mS
°C
°C
dB
W
%
V
V
V
V
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FLL357ME Summary of contents
Page 1
... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications ...
Page 2
... FLL357ME L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 150 Case Temperature (° DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 1200 800 400 0 2 200 OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.6I DSS f = 2.3 GHz P out η ...
Page 3
... Download S-Parameters, click here 3 FLL357ME S 21 +90° 1 0.5 0° 2 .02 .04 .06 .08 -90° S22 MAG ANG .427 -167.0 .461 -167.5 ...
Page 4
... FLL357ME L-Band Medium & High Power GaAs FET For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...