MRF1015Mx Motorola, MRF1015Mx Datasheet

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MRF1015Mx

Manufacturer Part Number
MRF1015Mx
Description
MICROWAVE POWER TRANSISTORS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
REV 6
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz, 50 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
(I C = 10 mAdc, V BE = 0)
(I C = 10 mAdc, I E = 0)
(I E = 1.0 mAdc, I C = 0)
(V CB = 50 Vdc, I E = 0)
(I C = 250 mAdc, V CE = 5.0 Vdc)
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
Characteristic
Rating
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
Symbol
V CBO
V EBO
V CES
R JC
T stg
P D
I C
– 65 to +150
Value
17.5
Max
100
4.0
1.0
60
60
10
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
h FE
mW/ C
Watts
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
Min
4.0
60
60
10
MRF1015MB
MRF1015MA
15 W (PEAK), 960 – 1215 MHz
CASE 332A–03, STYLE 1
Typ
CASE 332–04, STYLE 1
40
MICROWAVE POWER
MRF1015MA MRF1015MB
TRANSISTORS
NPN SILICON
MRF1015MA
MRF1015MB
Max
100
1.0
Order this document
by MRF1015MA/D
(continued)
mAdc
Unit
Vdc
Vdc
Vdc
1

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MRF1015Mx Summary of contents

Page 1

... C = 250 mAdc 5.0 Vdc) NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 Symbol Value Unit ...

Page 2

... L1, L2 — 3 Turns #18 AWG, 1/8 ID Z1–Z8 — Microstrip, See Photomaster Board Material — 0.032 Glass Teflon Board Material — 2.5 Figure 1. 1090 MHz Test Circuit Typ Max Unit 5.0 7.5 pF 12.5 — — Degradation in Power Output + 50 Vdc – OUTPUT MOTOROLA RF DEVICE DATA ...

Page 3

... SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage – j5.0 – j10 – j15 1215 1090 f = 960 MHz Coordinates in Ohms Figure 6. Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA 1215 MHz ...

Page 4

... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “ ...

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