MPS-0810A9-02 MicroWave Technology, Inc., MPS-0810A9-02 Datasheet
MPS-0810A9-02
Manufacturer Part Number
MPS-0810A9-02
Description
800 To 960 Mhz Linear Amplifiers Preliminary Data Sheet
Manufacturer
MicroWave Technology, Inc.
Datasheet
1.MPS-0810A9-02.pdf
(2 pages)
Electrical Specifications
SYMBOL
Freq
SSG
P1 dB
IP3
NF
VSWR
GOF
GOT
Idd
0.9
0.7
1.3
1.7
1.5
1.1
800
Noise Figure @ 25C
840
Preliminary data contained herein is subject to change without notice. All rights reserved © March 2005
PARAMETERS
Frequency Range
Small Signal Gain
Pout at 1 dB Comp Point
Third-Order Intercept
Noise Figure
VSWR (Input/Output)
Gain Var. over 40 MHz
Gain Var. over Temp
DC Current
Freq. (GHz)
880
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
The MPS-0810A9-02 is a low-noise, high dynamic range amplifier designed for ultra linear
GSM, TDMA, CDMA, NMT-900 and ETACS receiver applications. The circuit is matched to
50 ohm and employs a single stage GaAs FET with internal matching to provide an
exceptional noise figure, 1.1 dB, combined with a high IP3, +34 dBm. Typical applications
are cellular base station receivers, tower mounted LNA's, picocell repeaters and receiver
multi-couplers.
920
Features:
510-651-6700
960
1.1 dB NF
15.0 dB Gain
+20.5 dBm P1dB
1000
FAX
@ 25°C, Vdd = 6.0 V, Zo = 50 ohms
510-651-2208
Maximum Bias Voltage
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
Absolute Maximum Ratings
Min
14.0
EMAIL
800
info@mwtinc.com
800 to 960 MHz Linear Amplifiers
Typical
34 dBm IP3
Single Positive Bias
Leadless Surface Mount Package
-0.015
+20.5
1.5:1
± 0.2
15.0
34.0
160
1.1
MPS-0810A9-02
Preliminary Data Sheet
2.0:1
± 0.5
Max
960
240
1.5
+25 dBm
+27 dBm
+85 °C
- 65 to + 150 °C
7.0 V
dB/°C
Unit
MHz
dBm
dBm
mA
dB
dB
dB
Related parts for MPS-0810A9-02
MPS-0810A9-02 Summary of contents
Page 1
... Features: The MPS-0810A9- low-noise, high dynamic range amplifier designed for ultra linear GSM, TDMA, CDMA, NMT-900 and ETACS receiver applications. The circuit is matched to 50 ohm and employs a single stage GaAs FET with internal matching to provide an exceptional noise figure, 1.1 dB, combined with a high IP3, +34 dBm. Typical applications are cellular base station receivers, tower mounted LNA's, picocell repeaters and receiver multi-couplers ...
Page 2
... GROUND PAD Application Circuit C1 100 160 nH CR1 8.0 V 510-651-2208 info@mwtinc.com FAX EMAIL MPS-0810A9-02 800 to 960 MHz Linear Amplifiers Preliminary Data Sheet Return Losses @ 25C 820 860 900 940 980 Freq. (MHz) GAP. .003 TYP. .250 .050 TYP. 8 PLCS. INPUT PAD ...