MPS-080817P-82 MicroWave Technology, Inc., MPS-080817P-82 Datasheet
MPS-080817P-82
Manufacturer Part Number
MPS-080817P-82
Description
806 To 849 Mhz Low Noise Receiver Amplifier
Manufacturer
MicroWave Technology, Inc.
Datasheet
1.MPS-080817P-82.pdf
(2 pages)
www.mwtinc.com
Symbol
Freq
SSG
P1dB
IP3
NF
VSWR
PAE
dd
GOF
GOT
2.0
1.0
Electrical at 25 C, Vdd= 7.5 V, Zo= 50
1.5
.5
Noise Figure vs. Frequency
810
Frequency Range
Small Signal Gain
P out at 1 dB Compression
Third-order Intercept
Noise Figure
Input VSWR
Gain Variation over Freq.
Gain Variation over Temp.
DC Current
Power Added Efficiency
820
Parameter
830
Frequency (MHz)
840
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
850
Min.
860
806
+42
13
The MPS-080817P-82 is a low noise , high dynamic range amplifier designed
for ultralinear receiver applications in the 806 to 849 MHz frequency range.
The circuit is matched to 50 ohm and employs a single stage GaAs FET with
internal matching to provide exceptional noise figure, 1.1 dB combined with
extremely high IP3, +44 dBm. Typical applications are cellular base station
receivers, Tower mounted LNA’s, smart antenna systems, picocell repeaters
and receiver multi-couplers.
Typical
+/-0.2
High +44 dBm Typ. IP3
Very Low Noise 1.1 dB Typ.
+28.0
+44.0
- .015
2.0:1
14.5 dB Typical Gain
14.5
330
Maximum Bias Voltage
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
1.1
26
Absolute Maximum Ratings
+/-0.5
Max Unit
2.5:1
849
400
1.5
MHz
dB
dBm
dBm
dB
dB
dB/ C
mA
%
10
16
14
12
810
820
Gain vs. Frequency
7.5 Volt Bias
26% High Power
Added Effeciency
Email: info@mwtinc.com
Frequency (MHz)
830
840
+85 C
-65 C to +150 C
8.0 V
480 mW
720 mW
850
860
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MPS-080817P-82 Summary of contents
Page 1
... Very Low Noise 1.1 dB Typ. High +44 dBm Typ. IP3 14.5 dB Typical Gain The MPS-080817P- low noise , high dynamic range amplifier designed for ultralinear receiver applications in the 806 to 849 MHz frequency range. The circuit is matched to 50 ohm and employs a single stage GaAs FET with internal matching to provide exceptional noise figure, 1 ...
Page 2
... Frequency (MHz) .050 TYP. LEAD 1 .270 .250 LEAD 5 .010 MAX TYP All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice. -10 -15 -20 -25 -30 850 860 .270 .020 TYP. LEAD 10 .020 TYP. .200 TYP. .050 TYP. ...