MRF1535FT1 Motorola, MRF1535FT1 Datasheet

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MRF1535FT1

Manufacturer Part Number
MRF1535FT1
Description
RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
( DataSheet : www.DataSheet4U.com )
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 520 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Broadband–Full Power Across the Band: 135–175 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
(1) Calculated based on the formula P
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
REV 5
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
Upon Request
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
C
= 25°C (1)
Characteristic
D
Rating
=
T J – T C
R θJC
400–470 MHz
450–520 MHz
Symbol
Symbol
V
R
V
T
P
DSS
T
I
θJC
GS
stg
D
D
J
CASE 1264A–02, STYLE 1
CASE 1264–09, STYLE 1
TO–272 STRAIGHT LEAD
MRF1535FT1
MRF1535T1
LATERAL N–CHANNEL
MRF1535FT1
RF POWER MOSFETs
520 MHz, 35 W, 12.5 V
MRF1535T1
PLASTIC
PLASTIC
TO–272
–65 to +150
BROADBAND
MRF1535T1 MRF1535FT1
Value
0.50
Max
0.90
±20
135
175
40
6
Order this document
www.DataSheet4U.com
by MRF1535T1/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
1

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MRF1535FT1 Summary of contents

Page 1

... PLASTIC MRF1535T1 CASE 1264A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1535FT1 Symbol Value Unit V 40 Vdc DSS V ±20 Vdc Adc D P 135 Watts D 0.50 W/°C T –65 to +150 °C stg T 175 °C J Symbol Max Unit R 0.90 °C/W θJC www.DataSheet4U.com MRF1535T1 MRF1535FT1 1 ...

Page 2

... Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ Load Mismatch (V = 15.6 Vdc 520 MHz Input Overdrive, VSWR 20 All Phase Angles) MRF1535T1 MRF1535FT1 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) R DS(on) V DS(on) C iss ...

Page 3

... Z5, Z6 0.110″ x 0.200″ Microstrip Z7 0.490″ x 0.080″ Microstrip Z8 0.250″ x 0.080″ Microstrip Z9 0.320″ x 0.080″ Microstrip Z10 0.240″ x 0.080″ Microstrip  Board Glass Teflon , 31 mils Figure 3. Input Return Loss versus Output Power MRF1535T1 MRF1535FT1 3 ...

Page 4

... TYPICAL CHARACTERISTICS, 135 – 175 MHz Figure 4. Gain versus Output Power Figure 6. Output Power versus Biasing Current Figure 8. Output Power versus Supply Voltage MRF1535T1 MRF1535FT1 4 Figure 5. Drain Efficiency versus Output Power Figure 7. Drain Efficiency versus Biasing Current Figure 9. Drain Efficiency versus Supply Voltage ...

Page 5

... Microstrip Z5, Z8 0.120″ x 0.080″ Microstrip Z6, Z7 0.120″ x 0.223″ Microstrip Z9 1.380″ x 0.080″ Microstrip Z10 0.625″ x 0.080″ Microstrip  Board Glass Teflon , 31 mils Figure 12. Input Return Loss versus Output Power MRF1535T1 MRF1535FT1 5 ...

Page 6

... TYPICAL CHARACTERISTICS, 450 – 520 MHz Figure 13. Gain versus Output Power Figure 15. Output Power versus Biasing Current Figure 17. Output Power versus Supply Voltage MRF1535T1 MRF1535FT1 6 Figure 14. Drain Efficiency versus Output Power Figure 16. Drain Efficiency versus Biasing Current Figure 18. Drain Efficiency versus Supply Voltage ...

Page 7

... Ω MHz Ω 1.7 + j0.2 450 0.8 – j1.4 1.7 + j0.2 470 0.9 – j1.4 1.3 + j0.1 500 1.0 – j1.4 520 0.9 – j1 Complex conjugate of source in impedance Complex conjugate of the load OL impedance at given output power, > voltage, frequency, and η Ω 1.0 – j0.8 1.1 – j0.6 1.1 – j0.6 1.1 – j0.5 > MRF1535T1 MRF1535FT1 7 ...

Page 8

... MRF1535T1 MRF1535FT1 8 = 12.5 Vdc 250 ∠ φ 8.496 83 0.014 3.936 72 0.014 2.429 63 0.011 1.627 57 0.010 1.186 53 0 ...

Page 9

... DS(on) ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. has a positive temperature DS(on) is not DSS can result in permanent GS ), whose value is application dependent 150 mA, which is the DQ may DQ MRF1535T1 MRF1535FT1 9 Ω 9 ...

Page 10

... Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large–signal MRF1535T1 MRF1535FT1 10 impedances are provided, and will yield a good first pass approximation. ...

Page 11

... MOTOROLA RF DEVICE DATA NOTES MRF1535T1 MRF1535FT1 11 ...

Page 12

... MRF1535T1 MRF1535FT1 12 NOTES MOTOROLA RF DEVICE DATA ...

Page 13

... MOTOROLA RF DEVICE DATA NOTES MRF1535T1 MRF1535FT1 13 ...

Page 14

... DATUM H PLANE MRF1535T1 MRF1535FT1 14 PACKAGE DIMENSIONS DRAIN SEATING C PLANE SEATING PLANE CASE 1264–09 ISSUE J TO–272 PLASTIC MRF1535T1 Ç Ç Ç Ç DRAIN ID Ç ...

Page 15

... VIEW Y–Y INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb MRF1535T1 MRF1535FT1 15 ...

Page 16

... HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 MRF1535T1 MRF1535FT1 ◊ 16 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd. ...

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