MRF18060ASR3 Motorola, MRF18060ASR3 Datasheet - Page 2

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MRF18060ASR3

Manufacturer Part Number
MRF18060ASR3
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Forward Transconductance
Input Capacitance (Including Input Matching Capacitor in Package) (1)
Output Capacitance (1)
Reverse Transfer Capacitance
Common–Source Amplifier Power Gain @ 60 W (2)
Drain Efficiency @ 60 W (2)
Input Return Loss (2)
Output Mismatch Stress
2
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f = 1805 – 1880 MHz)
(V
All Phase Angles at Frequency of Tests)
consistency.
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
= 0 Vdc, I
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, P
= 26 Vdc, P
D
DS
D
D
D
D
DQ
DQ
= 10 µAdc)
GS
out
out
= 300 µAdc)
= 500 mAdc)
= 2 Adc)
= 2 Adc)
= 0 Vdc)
= 500 mA, f = 1805 – 1880 MHz)
= 500 mA, f = 1805 – 1880 MHz)
= 0 Vdc)
= 60 W CW, I
= 60 W CW, I
Characteristic
DQ
DQ
= 500 mA,
= 500 mA VSWR = 10:1,
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
V
Symbol
V
V
V
(BR)DSS
I
I
DS(on)
C
C
GS(th)
GS(Q)
C
G
GSS
IRL
DSS
g
Ψ
oss
η
rss
iss
fs
ps
11.5
Min
2.5
65
43
2
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
Before and After Test
0.27
Typ
160
740
3.9
4.7
2.7
13
45
Max
–10
4.5
6
1
4
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%
S

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