MRF18085BLSR3 Motorola, MRF18085BLSR3 Datasheet

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MRF18085BLSR3

Manufacturer Part Number
MRF18085BLSR3
Description
RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 3
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for GSM and GSM EDGE base station applications with
MHz)
@ f = 1930 MHz
40µ″ Nominal.
Derate above 25°C
Select Documentation/Application Notes - AN1955.
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
C
= 25°C
Test Conditions
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
Go to: www.freescale.com
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
MRF18085BLSR3
D
J
MRF18085BR3
MRF18085BR3 MRF18085BLSR3
1.9 - 1.99 GHz, 85 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
GSM/GSM EDGE
M3 (Minimum)
1 (Minimum)
MRF18085BLSR3
- 65 to +150
MRF18085BR3
Value (1)
- 0.5, +15
Class
Value
1.56
0.79
273
200
NI - 780S
65
NI - 780
Order this document
by MRF18085B/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF18085BLSR3 Summary of contents

Page 1

... GHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF18085BR3 CASE 465A - 06, STYLE 780S MRF18085BLSR3 Value Unit 65 Vdc - 0.5, +15 Vdc GS 273 Watts D 1.56 W/° +150 °C stg 200 °C J Value (1) Unit 0.79 °C/W θJC Class 1 (Minimum) M3 (Minimum) MRF18085BR3 MRF18085BLSR3 1 ...

Page 2

... MHz Output Mismatch Stress @ P1dB ( Vdc 600 mA 1930 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF18085BR3 MRF18085BLSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS ...

Page 3

... Microstrip 0.362″ x 1.260″ Microstrip 0.583″ x 0.669″ Microstrip 0.449″ x 0.179″ Microstrip 0.877″ x 0.082″ Microstrip 0.326″ x 0.082″ Microstrip  0.030″ Glass Teflon (e = 2.55 SUPPLY C7 C6 Ground MRF18085BR3 MRF18085BLSR3 A2 3 ...

Page 4

... C13 10 mF Tantalum Capacitor C14 8.2 pF Chip Capacitor, ACCU - P (0805) Figure 3. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Schematic Figure 4. 1.93 - 1.99 GHz GSM EDGE Optimized Demo Board Component Layout MRF18085BR3 MRF18085BLSR3 C14 Ω Chip Resistor (0805 kΩ ...

Page 5

... W Avg Avg. 1.93 1.94 1.95 1.96 1.97 1.98 1.99 f, FREQUENCY (GHz) Frequency G ps EVM OUTPUT POWER (dBm) AVG. out Vdc 800 1.96 GHz 10 100 P , OUTPUT POWER (WATTS) out versus Output Power MRF18085BR3 MRF18085BLSR3 2 ...

Page 6

... Center 1.96 GHz Figure 11. EDGE Spectrum at 40 Watts (Avg.) Output Power MRF18085BR3 MRF18085BLSR3 6 TYPICAL CHARACTERISTICS RBW 30 kHz RF Att VBW 30 kHz SWT 70 ms Unit 200 kHz For More Information On This Product, Go to: www.freescale.com ...

Page 7

... DD DQ out source load MHz Ω Ω 1805 1.43 - j3. j3.60 1880 1.27 - j3.95 1.98 - j3.57 1930 1.5 - j4.13 2.13 - j3.16 1990 1.86 - j4.76 2.17 - j3.36 = Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network Z Z source load Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF18085BR3 MRF18085BLSR3 8 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF18085BR3 MRF18085BLSR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF18085BR3 MRF18085BLSR3 10 NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE MRF18085BR3 MRF18085BLSR3 11 ...

Page 12

... E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF18085BR3 MRF18085BLSR3 ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N ...

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