MRF19045R3

Manufacturer Part NumberMRF19045R3
DescriptionRF POWER FIELD EFFECT TRANSISTORS
ManufacturerMotorola
MRF19045R3 datasheet
 
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, I
Multi–carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: –50 dBc @ 30 kHz BW
IM3 — –37 dBc
• 100% Tested Under 2–Carrier N–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 3
MOTOROLA RF DEVICE DATA
Motorola, Inc. 2002
MRF19045R3
MRF19045SR3
= 550 mA
DQ
1990 MHz, 45 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465E–03, STYLE 1
CASE 465F–03, STYLE 1
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Symbol
R
θJC
MRF19045R3 MRF19045SR3
Order this document
by MRF19045/D
NI–400
MRF19045R3
NI–400S
MRF19045SR3
Value
Unit
65
Vdc
–0.5, +15
Vdc
105
Watts
0.60
W/°C
°C
–65 to +200
°C
200
Class
2 (Minimum)
M3 (Minimum)
Max
Unit
°C/W
1.65
1

MRF19045R3 Summary of contents

  • Page 1

    ... LATERAL N–CHANNEL RF POWER MOSFETs CASE 465E–03, STYLE 1 CASE 465F–03, STYLE 1 Symbol V DSS stg T J Symbol R θJC MRF19045R3 MRF19045SR3 Order this document by MRF19045/D NI–400 MRF19045R3 NI–400S MRF19045SR3 Value Unit 65 Vdc –0.5, +15 Vdc 105 Watts 0.60 W/°C °C –65 to +200 ° ...

  • Page 2

    ... MHz Output Mismatch Stress ( Vdc CW 550 mA, DD out 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19045R3 MRF19045SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I DSS I GSS V GS(th) V ...

  • Page 3

    ... Ph Rec. Hd. Screws, 0.625″ long MOTOROLA RF DEVICE DATA Z9 0.519″ x 0.254″ Microstrip Z10 0.874″ x 0.081″ Microstrip Z11 0.645″ x 0.081″ Microstrip Board 3″ x 5″ Copper Clad PCB, Arlon GX0300-55-22, ε = 2.55 r Printed Circuit CMR Part Number 19045PC5.SKF Board Description MRF19045R3 MRF19045SR3 3 ...

  • Page 4

    ... Figure 2. 1930 – 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045R3 MRF19045SR3 4 C6 MRF19045/S Rev–0 MOTOROLA RF DEVICE DATA ...

  • Page 5

    ... MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η η Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power Figure 6. 2-Carrier N-CDMA ACPR Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power versus Output Power η MRF19045R3 MRF19045SR3 5 ...

  • Page 6

    ... Drain Efficiency versus Output Power Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045R3 MRF19045SR3 6 η Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency Figure 12. CW Two-Tone Power Gain versus Output Power Figure 14 ...

  • Page 7

    ... Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA Ω Ω Ω MHz 1930 15.52 + j16.5 4.52 + j1.86 1960 14.24 + j14.44 3.85 + j1.04 1990 11.11 + j13.01 3.44 + j0.69 = Complex conjugate of the optimum source impedance. impedance at a given output power, voltage, IMD, bias current and frequency MRF19045R3 MRF19045SR3 7 ...

  • Page 8

    ... MRF19045R3 MRF19045SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

  • Page 9

    ... MOTOROLA RF DEVICE DATA NOTES MRF19045R3 MRF19045SR3 9 ...

  • Page 10

    ... MRF19045R3 MRF19045SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

  • Page 11

    ... CASE 465F–03 ISSUE B NI–400S MRF19045SR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb H ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF19045R3 MRF19045SR3 11 ...

  • Page 12

    ... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF19045R3 MRF19045SR3 12 MOTOROLA RF DEVICE DATA MRF19045/D ...