MRF19085R3 Motorola, MRF19085R3 Datasheet

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MRF19085R3

Manufacturer Part Number
MRF19085R3
Description
RF Power Field Effect Transistors
Manufacturer
Motorola
Datasheet
www.datasheet4u.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 6
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
I
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
40
DQ
Derate above 25°C
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 18 Watts Avg.
Power Gain — 13.0 dB
Efficiency — 23%
ACPR — - 51 dB
IM3 — - 36.5 dBc
µ″ Nominal.
= 850 mA, P
out
= 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
C
= 25°C
Test Conditions
Freescale Semiconductor, Inc.
Characteristic
For More Information On This Product,
Rating
Go to: www.freescale.com
DD
= 26 Volts,
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF19085R3,MRF19085LR3
MRF19085SR3, MRF19085LSR3
MRF19085LSR3
CASE 465 - 06, STYLE 1
MRF19085SR3
MRF19085LR3
CASE 465A - 06, STYLE 1
MRF19085R3
LATERAL N - CHANNEL
RF POWER MOSFETs
1990 MHz, 90 W, 26 V
NI - 780
M3 (Minimum)
NI - 780S
1 (Minimum)
- 65 to +150
Value (1)
- 0.5, +15
Class
Value
1.56
0.79
273
200
65
Order this document
by MRF19085/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF19085R3 Summary of contents

Page 1

... MOTOROLA RF DEVICE DATA  Motorola, Inc. 2004 Freescale Semiconductor, Inc Volts, DD Rating = 25°C Characteristic Test Conditions MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com Order this document by MRF19085/D MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 1990 MHz LATERAL N - CHANNEL ...

Page 2

... MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Output Mismatch Stress ( Vdc CW out = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 2 Freescale Semiconductor, Inc 25°C unless otherwise noted) C Symbol V (BR)DSS ...

Page 3

... C Symbol = 850 mA 1930 MHz and DQ = 850 mA 1930 MHz and DQ = 850 mA 1930 MHz and DQ = 850 mA 1930 MHz and DQ P1dB MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com Min Typ Max G — 13 — ps η ...

Page 4

... Microstrip Z2 Microstrip Z3 Microstrip Z4 Microstrip Z5 Microstrip Z6 Microstrip Z7 Microstrip Z8 Microstrip Z9 Microstrip Board 0.030″ Glass Teflon PCB Etched Circuit Boards MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 4 Freescale Semiconductor, Inc DUT Description Value, P/N or DWG 2743019447 100B510JCA500X 100B5R1JCA500X 100B102JCA500X CDR33BX104AKWS T491C105M050 100B100JCA500X T495X106K035AS4394 T491X226K035AS4394 3052-1648-10 0.750″ ...

Page 5

... www.datasheet4u.com C1 Figure 2. 1930 - 1990 MHz 2 - Carrier N - CDMA Test Circuit Component Layout MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com C10 C9 C11 C12 C6 MRF19085 Rev.4 5 ...

Page 6

... MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF 1930 1940 1950 1960 f, FREQUENCY (MHz) Figure 7. 2-Carrier N-CDMA Broadband Performance MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 6 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 1958.75 MHz 1961.25 MHz 25 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) ...

Page 7

... Tone Spacing IMD 1920 1930 1940 1950 1960 f, FREQUENCY (MHz) Figure 11. Two-Tone Broadband Performance MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com I = 1150 mA DQ 1000 mA 850 mA 700 mA 550 Vdc 1960 MHz 100 kHz Tone Spacing ...

Page 8

... Figure 12. Series Equivalent Input and Output Impedance MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 8 Freescale Semiconductor, Inc Ω 1990 MHz load f = 1930 MHz f = 1990 MHz 1930 MHz source 850 mA Avg out source load MHz Ω ...

Page 9

... MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. NOTES MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com 9 ...

Page 10

... MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 10 Freescale Semiconductor, Inc. NOTES For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... C 3 SEATING T CASE 465A - 06 PLANE ISSUE 780S MRF19085SR3, MRF19085LSR3 MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 For More Information On This Product, Go to: www.freescale.com NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. ...

Page 12

... E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3 12 Freescale Semiconductor, Inc. JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd. ...

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