MRF21125SR3 Motorola, MRF21125SR3 Datasheet

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MRF21125SR3

Manufacturer Part Number
MRF21125SR3
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for V
• 100% Tested under 2–carrier W–CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 5
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for W–CDMA base station applications with frequencies from 2110
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 28 Volts, I
DQ
= 1600
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
MRF21125 MRF21125S MRF21125SR3
GS
D
J
CASE 465B–03, STYLE 1
CASE 465C–02, STYLE 1
MRF21125SR3
MRF21125S
(MRF21125S)
LATERAL N–CHANNEL
MRF21125
(MRF21125)
2170 MHz, 125 W, 28 V
RF POWER MOSFETs
(NI–880S)
(NI–880)
M3 (Minimum)
2 (Minimum)
–65 to +150
+15, –0.5
Value
Class
1.89
Max
0.53
330
200
65
Order this document
by MRF21125/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF21125SR3 Summary of contents

Page 1

... CASE 465B–03, STYLE 1 CASE 465C–02, STYLE 1 Symbol V DSS stg T J Symbol R θJC MRF21125 MRF21125S MRF21125SR3 Order this document by MRF21125/D MRF21125 MRF21125S 2170 MHz, 125 LATERAL N–CHANNEL RF POWER MOSFETs (NI–880) (MRF21125) (NI–880S) (MRF21125S) Value Unit 65 Vdc +15, –0.5 ...

Page 2

... MHz 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) Output Mismatch Stress ( Vdc 125 W CW 1600 mA 2170 MHz, DD out DQ VSWR = 5:1, All Phase Angles at Frequency of Test) (1) Part is internally matched both on input and output. MRF21125 MRF21125S MRF21125SR3 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS g fs ...

Page 3

... Vdc 125 W CW 1600 mA 2170.0 MHz) DD out DQ MOTOROLA RF DEVICE DATA (T = 25°C unless otherwise noted) C Symbol Min G — ps η — IMD — G — ps η — MRF21125 MRF21125S MRF21125SR3 Typ Max Unit 12 — — % –30 — dBc 11.5 — — ...

Page 4

... W Chip Resistor R2 560 kΩ, 1/8 W Chip Resistor 4.7 Ω, 1/8 W Chip Resistor R3 12 Ω, 1/8 W Chip Resistor R4 W1 Solid Copper Buss Wire, 16 AWG MRF21125 MRF21125S MRF21125SR3 4 Z9 0.179″ x 0.219″ Microstrip Z10 0.100″ x 0.336″ Microstrip Z11 0.534″ x 0.142″ Microstrip Z12 0.089″ ...

Page 5

... Figure 2. MRF21125 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21125 MRF21125S MRF21125SR3 5 ...

Page 6

... Figure 3. 2 Carrier (10 MHz spacing) W–CDMA Spectrum η Figure 5. CW Performance Figure 7. Intermodulation Distortion versus Output Power MRF21125 MRF21125S MRF21125SR3 6 TYPICAL CHARACTERISTICS Figure 4. 2 Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Figure 6. Broadband Linearity Performance Figure 8. Power Gain versus Output Power η ...

Page 7

... MOTOROLA RF DEVICE DATA f MHz Ω 2110 3.81 + j6.86 2140 4.33 + j7.90 2170 4.84 + j8. Complex conjugate of source impedance Complex conjugate of the optimum load OL impedance at a given output power, voltage, IMD, bias current and frequency MRF21125 MRF21125S MRF21125SR3 Ω Ω 1.56 – j1.58 1.53 – j1.90 1.48 – j2.26 7 ...

Page 8

... MRF21125 MRF21125S MRF21125SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF21125 MRF21125S MRF21125SR3 9 ...

Page 10

... MRF21125 MRF21125S MRF21125SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 465C–02 ISSUE A (NI–880S) (MRF21125S) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF21125 MRF21125S MRF21125SR3 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ ◊ MRF21125 MRF21125S MRF21125SR3 12 MOTOROLA RF DEVICE DATA MRF21125/D ...

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