MRF5711LT1 Motorola, MRF5711LT1 Datasheet - Page 2
MRF5711LT1
Manufacturer Part Number
MRF5711LT1
Description
(MRF571 / MRF5711LT1) NPN Silicon High-Frequency Transistors
Manufacturer
Motorola
Datasheet
1.MRF5711LT1.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF5711LT1G
Manufacturer:
ON
Quantity:
15 000
Part Number:
MRF5711LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS
Gain @ Noise Figure
Noise Figure
MMBR571LT1 MRF571 MRF5711LT1
2
(I C = 10 mAdc, V CE = 6.0 Vdc)
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I C = 10 mAdc, V CE = 5.0 Vdc)
Collector–Emitter Breakdown Voltage (I C = 1.0 mA, I B = 0)
Collector–Base Breakdown Voltage (I C = 0.1 mA, I E = 0)
Emitter–Base Breakdown Voltage (I E = 50 Adc, I C = 0)
Collector Cutoff Current (V CB = 8.0 Vdc, I E = 0)
DC Current Gain (I C = 30 mAdc, V CE = 5.0 Vdc)
Collector–Base Capacitance
Current Gain–Bandwidth Produc
Gain @ Noise Figure
Noise Figure
Noise Figure
Power Gain in 50
25
20
15
10
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 6.0 Vdc, I E = 0, f = 1.0 MHz)
(V CE = 5.0 Vdc, I C = 50 mAdc, f = 1.0 GHz)
(V CE = 8.0 Vdc, I C = 50 mAdc, f = 1.0 GHz)
(I C = 10 mAdc, V CE = 6.0 Vdc)
(I C = 10 mA, V CE = 6.0 Vdc)
(I C = 10 mAdc, V CE = 6.0 Vdc)
(V CE = 6.0 V, I C = 10 mA, f = 1.0 GHz)
5
0
0.4
Figure 1. Maximum Available Gain
0.6
System (V CE = 6.0 V, I C = 10 mA, f = 1.0 GHz)
G A MAX
versus Frequency
f, FREQUENCY (GHz)
1
+
Characteristic
| S 21 |
|S 12 |
(k
"
(T A = 25 C unless otherwise noted)
V CE = 5 V
(k 2 – 1) ), k
I C = 30 mA
MRF571
MRF571
MRF571
MRF571
MMBR571LT1
MRF5711LT1
MMBR571LT1
MRF5711LT1
MRF5711LT1
MRF5711LT1
2
TYPICAL CHARACTERISTICS
MMBR571LT1
MRF5711LT1, MRF571
MMBR571LT1
MRF5711LT1, MRF571
3
w
MMBR571LT1
1
f = 0.5 GHz
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
10
8
6
4
2
0
0
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
NF min
|S 21 | 2
I CBO
G NF
G NF
h FE
C cb
Figure 2. Current Gain–Bandwidth versus
NF
NF
f T
10
20
Collector Current @ 1.0 GHz
I C , COLLECTOR CURRENT (mA)
30
Min
2.5
9.0
10
20
—
50
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
40
MOTOROLA RF DEVICE DATA
50
0.75
16.5
16.5
10.5
13.5
Typ
0.7
8.0
8.0
1.0
1.5
2.8
2.0
2.6
2.2
1.6
12
12
10
—
—
—
—
60
70
Max
300
1.0
1.0
2.0
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V CE = 5 V
f = 1 GHz
80
90
GHz
Unit
Vdc
Vdc
Vdc
dB
dB
dB
dB
dB
dB
Adc
pF
—
100