MRF5S21130SR3 Motorola, MRF5S21130SR3 Datasheet

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MRF5S21130SR3

Manufacturer Part Number
MRF5S21130SR3
Description
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
Motorola
Datasheet
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2–carrier W–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
REV 0
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Designed for W–CDMA base station applications at frequencies from 2110
I
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power
DQ
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 28 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 — –37 dBc
ACPR — –39 dBc
= 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
C
= 25°C
Rating
DD
Operation
DD
= 28 Volts,
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
5 MHz
Symbol
V
V
CW
T
P
DSS
T
stg
GS
MRF5S21130SR3
D
J
CASE 465B–03, STYLE 1
MRF5S21130R3
CASE 465C–02, STYLE 1
MRF5S21130S
MRF5S21130
MRF5S21130S
MRF5S21130
LATERAL N–CHANNEL
2170 MHz, 28 W AVG.,
RF POWER MOSFETs
NI–880S
2 x W–CDMA, 28 V
NI–880
–65 to +150
–0.5, +15
Value
315
200
65
92
2
Order this document
by MRF5S21130/D
Watts
Watts
W/°C
Unit
Vdc
Vdc
°C
°C
1

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MRF5S21130SR3 Summary of contents

Page 1

... MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 = 28 Volts, DD Operation DD Rating = 25°C C MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 Order this document by MRF5S21130/D MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2170 MHz AVG W–CDMA MHz – LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B– ...

Page 2

... MHz at f1 –5 MHz and f2 +5 MHz.) Input Return Loss ( Vdc Avg out f2 = 2122.5 MHz and f1 = 2157.5 MHz 2167.5 MHz) (1) Part is internally matched both on input and output. MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 Characteristic (T = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 µ Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 Z9, Z10 0.709″ x 0.083″ Microstrip Z11 0.415″ x 1.000″ Microstrip Z12 0.531″ x 0.083″ Microstrip Z13 0.994″ ...

Page 4

... MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 4 Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 Rev 0 MOTOROLA RF DEVICE DATA ...

Page 5

... Output Power Figure 6. Intermodulation Distortion Products versus Tone Spacing MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS η Figure 3. 2–Carrier W–CDMA Broadband Performance MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 Figure 5. Third Order Intermodulation Distortion versus Output Power µ Figure 7. Pulse CW Output Power versus Input Power 5 ...

Page 6

... Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power www.DataSheet4U.com Gain and Drain Efficiency versus Output Power Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 6 η Figure 9. 2-Carrier W-CDMA Spectrum ± Figure 11. MTBF Factor versus Junction Temperature ° ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground source load Figure 12. Series Equivalent Input and Output Impedance MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 Z load Ω 7 ...

Page 8

... MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 9 ...

Page 10

... MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... C SEATING T PLANE A CASE 465B–03 ISSUE B NI–880 MRF5S21130 (INSULATOR) N (LID) C SEATING T PLANE CASE 465C–02 ISSUE A NI–880S MRF5S21130S MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 INCHES MILLIMETERS DIM MIN MAX (LID (INSULATOR aaa ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 12 ◊ MOTOROLA RF DEVICE DATA ...

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