MRF6V2300NB Motorola Semiconductor, MRF6V2300NB Datasheet

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MRF6V2300NB

Manufacturer Part Number
MRF6V2300NB
Description
RF Power Field Effect Transistor
Manufacturer
Motorola Semiconductor
Datasheet

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www.DataSheet4U.com
DataSheet
4
U
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW
Features
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
.com
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for pulsed wideband large - signal output and driver
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
Operation
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
out
Power Gain — 27 dB
Drain Efficiency — 68%
the MTTF calculators by product. (Calculator available when part is in production.)
Select Documentation/Application Notes - AN1955.
= 300 Watts
(1,2)
Characteristic
Rating
DD
= 50 Volts, I
DQ
= 900 mA,
Document Number: Order from RF Marketing
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
CASE 1486 - 03, STYLE 1
J
CASE 1484 - 04, STYLE 1
TO - 270 WB - 4
MRF6V2300N
PARTS ARE SINGLE - ENDED
MRF6V2300NB
10 - 450 MHz, 300 W, 50 V
MRF6V2300NB
LATERAL N - CHANNEL
TO - 272 WB - 4
PLASTIC
MRF6V2300N
RF POWER MOSFETs
PLASTIC
MRF6V2300N MRF6V2300NB
PREPRODUCTION
SINGLE - ENDED
BROADBAND
- 65 to +150
- 0.5, +110
- 6.0, +10
Value
Value
TBD
TBD
225
(3)
Rev. 4, 10/2006
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF6V2300NB Summary of contents

Page 1

... TO - 270 PLASTIC MRF6V2300N CASE 1484 - 04, STYLE 272 PLASTIC MRF6V2300NB PARTS ARE SINGLE - ENDED Symbol Value V - 0.5, +110 DSS V - 6.0, + +150 stg T 225 J (3) Symbol Value R θJC TBD TBD MRF6V2300N MRF6V2300NB Unit Vdc Vdc °C °C Unit °C/W 1 ...

Page 2

... Compression Point, CW out (f = 220 MHz) ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices ...

Page 3

... P , OUTPUT POWER (WATTS) CW out Figure 2. Power Gain versus Output Power 60 85_C 55 25_C INPUT POWER (dBm) in Figure 4. Output Power versus Input Power over Temperature MRF6V2300N MRF6V2300NB 350 400 −30_C Vdc 900 220 MHz ...

Page 4

... B GATE LEAD aaa DATUM H c1 PLANE A1 A2 NOTE MRF6V2300N MRF6V2300NB 4 4 DataSheet U .com PACKAGE DIMENSIONS DRAIN LEAD ZONE SEATING C PLANE E5 E4 PIN 5 Ç Ç Ç Ç Ç Ç NOTE 8 Ç Ç Ç Ç Ç Ç ...

Page 5

... RF Device Data Freescale Semiconductor 4 DataSheet U .com MRF6V2300N MRF6V2300NB 5 ...

Page 6

... MRF6V2300N MRF6V2300NB 6 4 DataSheet U .com RF Device Data Freescale Semiconductor ...

Page 7

... RF Device Data Freescale Semiconductor 4 DataSheet U .com MRF6V2300N MRF6V2300NB 7 ...

Page 8

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V2300N MRF6V2300NB Document Number: Order from RF Marketing Rev. 4, 10/2006 .com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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