MRF6V2300NB Motorola Semiconductor, MRF6V2300NB Datasheet - Page 3

• Manufacturer Part Number: MRF6V2300NB
• Description: RF Power Field Effect Transistor
• Manufacturer: Motorola Semiconductor

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DataSheet
4
U
RF Device Data
Freescale Semiconductor
.com
27.5
26.5
25.5
24.5
27
26
25
24
−20
−25
−30
−35
−40
−45
−50
0
G
0
ps
Figure 1. Power Gain and Drain Efficiency
50
Figure 3. Third Order Intermodulation
IM3 −U
Distortion versus Output Power
η
D
100
P
versus CW Output Power
P
out
50
out
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) PEP
150
IM3 −L
200
V
f = 220 MHz
I
100
DQ
DD
= 50 Vdc
= 900 mA
250
V
f1 = 220 MHz, f2 = 220.1 MHz
Two −Tone Measurements
DD
= 50 Vdc, I
300
150
TYPICAL CHARACTERISTICS
DQ
350
= 900 mA
400
200
80
70
60
50
40
30
20
10
60
55
50
45
40
35
28
27
26
25
24
23
10
0
1090 mA
720 mA
Figure 4. Output Power versus Input Power
Figure 2. Power Gain versus Output Power
50
I
DQ
15
= 990 mA
100
810 mA
P
out
, OUTPUT POWER (WATTS) CW
P
over Temperature
150
in
, INPUT POWER (dBm)
20
900 mA
MRF6V2300N MRF6V2300NB
200
V
f = 220 MHz
DD
= 50 Vdc
25
250
85_C
300
25_C
V
I
f = 220 MHz
DQ
DD
30
= 900 mA
= 50 Vdc
350
−30_C
400
35
3