MRF859S

Manufacturer Part NumberMRF859S
DescriptionNPN SILICON RF POWER TRANSISTOR
ManufacturerMotorola
MRF859S datasheet
 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz.
Specified for V CE = 24 Vdc, I C = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = + 47 dBm
Typical Noise Figure = 6 dB
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz
Silicon Nitride Passivated
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, I C = 0.9 Adc and Rated Output Power
Will Withstand RF Input Overdrive of 2 W CW
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
MAXIMUM RATINGS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ T C = 60 C
Derate above 60 C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance (T J = 150 C, T C = 60 C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = 25 mA, I B = 0)
Collector–Emitter Breakdown Voltage (I C = 25 mA, V BE = 0)
Collector–Base Breakdown Voltage (I C = 25 mA, I E = 0)
Emitter–Base Breakdown Voltage (I E = 5 mA, I C = 0)
Collector Cutoff Current (V CB = 15 V, I E = 0)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
REV 2
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
4
DataSheet
U
.com
Rating
Characteristic
Symbol
V (BR)CEO
V (BR)CES
V (BR)CBO
V (BR)EBO
I CES
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Order this document
by MRF859/D
MRF859
MRF859S
CLASS A
800 – 960 MHz
6.5 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF859
CASE 319A–02, STYLE 2
MRF859S
Symbol
Value
Unit
V CEO
30
Vdc
V CBO
55
Vdc
V EBO
4
Vdc
P D
34
Watts
0.24
W/ C
T J
200
C
T stg
– 65 to +150
C
Symbol
Max
Unit
R JC
3.9
C/W
Min
Typ
Max
Unit
28
32
Vdc
55
75
Vdc
55
75
Vdc
4
5
Vdc
2
mA
(continued)
MRF859 MRF859S
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MRF859S Summary of contents

  • Page 1

    ... C T stg – +150 C Symbol Max Unit R JC 3.9 C/W Min Typ Max Unit 28 32 — Vdc 55 75 — Vdc 55 75 — Vdc 4 5 — Vdc — — (continued) MRF859 MRF859S www.DataSheet www.DataSheet www.DataSheet www.DataSheet4U 1 4U 4U.com 4U .com .com .com ...

  • Page 2

    ... Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF859 MRF859S 2 4 DataSheet U .com Symbol in(over) ITO NF IRL Table 1. Common Emitter S– ...

  • Page 3

    ... W 4 Copper Block 0.550 x 0.180 x 0.050 50 , Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line 0.030 Glass–Teflon 2 oz. Cu 2.55 + 27.6 Vdc 0.5 Vdc Due to Resistor Tolerance + 24 Vdc @ 0.9 A MRF859 MRF859S www.DataSheet www.DataSheet www.DataSheet www.DataSheet4U C6 OUTPUT 3 4U 4U.com 4U .com ...

  • Page 4

    ... Figure 3. Output Power & Power Gain versus Input Power 2500 2000 1500 175 1000 500 Figure 5. DC SOA MRF859 MRF859S 4 4 DataSheet U .com TYPICAL CHARACTERISTICS 14 Vdc 13 900 mA P out = 6.5 W (CW ...

  • Page 5

    ... Motorola, Inc. Motorola, Inc Equal Opportunity/Affirmative Action Employer. MOTOROLA RF DEVICE DATA 4 DataSheet U .com C16 C12 C10 Figure 7. MRF859 Test Fixture Component Layout www.DataSheet4U.com + C15 C11 C13 C14 MRF859 MRF859 MRF859S www.DataSheet www.DataSheet www.DataSheet4U www.DataSheet 5 4U 4U.com 4U .com .com .com ...

  • Page 6

    ... H IDENTIFICATION NOTCH How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com MRF859 MRF859S 6 4 DataSheet U .com PACKAGE DIMENSIONS Q - 0.15 (0.006 ...