MRF9080LSR3 Motorola, MRF9080LSR3 Datasheet

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MRF9080LSR3

Manufacturer Part Number
MRF9080LSR3
Description
RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet
www.datasheet4u.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
REV 2
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for GSM 900 MHz frequency band, the high gain and broadband
Output Power
40
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
µ″ Nominal.
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
BROADBAND RF POWER MOSFETs
J
GSM 900 MHz FREQUENCY BAND,
MRF9080LSR3
MRF9080SR3
MRF9080SR3, MRF9080LSR3
MRF9080R3
LATERAL N–CHANNEL
CASE 465A–06, STYLE 1
CASE 465–06, STYLE 1
MRF9080
M1 (Minimum)
1 (Minimum)
–65 to +200
–0.5, +15
75 W, 26 V
Value
Class
MRF9080
1.43
Max
NI–780S
250
200
0.7
65
NI–780
Order this document
by MRF9080/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9080LSR3 Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 Rating Test Conditions Characteristic MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 Order this document by MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND LATERAL N– ...

Page 2

... 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 25°C unless otherwise noted) C ...

Page 3

... Beryllium Copper Wear Blocks Raw PCB Material 30 mil Glass Teflon PCB Etched Circuit Board MOTOROLA RF DEVICE DATA Figure 1. Broadband GSM 900 Test Circuit Schematic Description  , ε = 2.55 r MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 Value, P/N or DWG Manufacturer 100B4R7BW ATC 100B2R7BW ATC 100B1R5BW ATC 100B5R6CW ATC 100B220GW ...

Page 4

... Figure 2. Broadband GSM 900 Test Circuit Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 4 MRF9080 MOTOROLA RF DEVICE DATA ...

Page 5

... Substrate = Taconic RF35, Thickness 0.5 mm MOTOROLA RF DEVICE DATA Description Value, P/N or DWG #08051J3R9CBT #08051J3R9CBT #08051J221 #T491X226K035AS4394 #08053G105ZATEA #08051J5R18CBT #08051J8R2CBT #08051J2R2CBT #100B #3224W #BC847ALT1 #LP2951ACDM–5.0R2 #R125510001 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 Manufacturer AVX AVX AVX Kemet AVX AVX AVX AVX ATC Bourns ON Semiconductor ON Semiconductor Radial 5 ...

Page 6

... Figure 4. Broadband GSM 900 Optimized Demo Board Component Layout MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 6 MRF9080 MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 9. Power Gain versus Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS ° ° Figure 6. Power Gain versus Output Power h Figure 8. Output Power and Efficiency versus ° h Figure 10. Output Power and Efficiency versus Input MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 ° Input Power ° ° ° Power 7 ...

Page 8

... Figure 11. Series Equivalent Input and Output Impedance MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 8 Ω Ω Ω MHz 880 0.91 + j2.11 1.22 + j0.12 920 0.88 + j2.65 1.00 + j0.16 960 1.6 + j2.61 1.22 + j0.22 1000 2.45 + j3.38 1.14 + j0. Complex conjugate of source impedance Complex conjugate of the optimum load OL impedance at a given output power, voltage, bias current and frequency. ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 9 ...

Page 10

... MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... CASE 465–06 ISSUE F NI–780 MRF9080 Z 4X (LID (LID) M (INSULATOR SEATING T PLANE CASE 465A–06 ISSUE F NI–780S MRF9080SR3, MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX (LID (INSULATOR ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 12 ◊ MOTOROLA RF DEVICE DATA ...

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