MRF957 Motorola, MRF957 Datasheet - Page 2

• Manufacturer Part Number: MRF957
• Description: (MRF9511 / MRF957) NPN Silicon Low Noise / High-Frequency Transistors
• Manufacturer: Motorola

DataSheet4U.com
www.DataSheet4U.com
DataSheet
NOTES:
MAXIMUM RATINGS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (3)
ON CHARACTERISTICS (3)
DYNAMIC CHARACTERISTICS
MMBR951 MRF957 MRF9511 SERIES
4
(V CE = 6.0 V, I C = 30 mA, f = 1.0 GHz)
2
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) T C = 75 C
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
MRF9511LT1 = 11
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector–Base Capacitance
Current Gain — Bandwidth Product
1. To calculate the junction temperature use T J = (P D x R JA ) + T CASE . Case temperature measured on collector lead immediately adjacent
2. I C — Continuous (MTBF
3. Pulse width
U
Derate linearly above T case = 75 C @
(I C = 0.1 mA, I B = 0)
(I C = 0.1 mA, I E = 0)
(V EB = 1.0 V, I C = 0)
(V CB = 10 V, I E = 0)
(V CE = 6.0 V, I C = 5.0 mA)
(V CE = 6.0 V, I C = 5.0 mA)
(V CB = 10 V, I E = 0, f = 1.0 MHz)
to body of package.
.com
300 s, duty cycle
Rating
MMBR951ALT1 = AAG
10 years).
All
MMBR951ALT1
Characteristic
2% pulsed.
(T A = 25 C unless otherwise noted)
MRF9511LT1, MMBR951LT1, MMBR951ALT1
MRF957T1
P D(max)
Symbol
T Jmax
V CEO
V CBO
V EBO
R JC
T stg
I C
DataSheet4U.com
MMBR951LT1 = 7Z
MMBR951ALT1
MMBR951LT1
– 55 to +150
0.322
4.29
100
150
233
1.5
10
20
MRF9511LT1
– 55 to +150
MRF957T1 = B
V (BR)CEO
V (BR)CBO
0.322
Symbol
4.29
100
150
233
1.5
I CBO
I EBO
10
20
h FE
C cb
f T
MOTOROLA RF DEVICE DATA
Min
10
20
50
75
—
—
—
—
—
– 55 to +150
MRF957T1
0.45
Typ
8.0
9.0
13
25
—
—
—
—
0.227
3.03
100
150
330
10
20
15
Max
200
150
0.1
0.1
1.0
—
—
—
—
mW/ C
Watts
GHz
Unit
Vdc
Vdc
Unit
Vdc
Vdc
Vdc
pF
mA
C/W
Adc
Adc
—
C
C