K1152 Renesas, K1152 Datasheet
K1152
Related parts for K1152
K1152 Summary of contents
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... Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party ...
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... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching www.DataSheet4U.com Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK ADE-208-1245 (Z) 1st. Edition Mar. 2001 1 ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value www.DataSheet4U.com 2 Symbol 2SK1151 ...
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... Reverse transfer capacitance www.DataSheet4U.com Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 2SK1151(L)(S), 2SK1152(L)(S) Symbol Min Typ Max 450 — — (BR)DSS 500 V 30 — ...
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... Power vs. Temperature Derating 100 Case Temperature T Typical Output Characteristics 2 www.DataSheet4U.com 6 V Pulse Test 1 1.2 0.8 0 Drain to Source Voltage 1.0 0.3 0.1 0.03 0.01 150 (° 1.6 4.5 V 1.2 0 0 (V) DS Maximum Safe Operation Area 2SK1151 Ta = 25°C ...
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... Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature www.DataSheet4U.com Pulse Test – Case Temperature T 2SK1151(L)(S), 2SK1152(L)(S) 100 Pulse Test = 0 ( 0.5 0.5 A 0.2 0.1 80 120 160 0.05 (°C) C Static Drain to Source on State Resistance vs. Drain Current ...
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... Body to Drain Diode Reverse Recovery Time 1,000 di/dt = 100A 25°C 500 Pulse Test 200 100 0.05 0.1 0.2 0.5 Reverse Drain Current I Dynamic Input Characteristics 500 www.DataSheet4U.com 100 V 250 V 400 V 400 V DS 300 200 V = 400 V 100 DD 250 V 100 Gate Charge Qg (nc) ...
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... Normalized Transient Thermal Impedance vs. Pulse Width www.DataSheet4U.com 1.0 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin = 10 V 2SK1151(L)(S), 2SK1152(L)(S) Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test 1.6 1.2 0.8 0 =0, –10V GS 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Pulse Width PW (s) ...
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... Package Dimensions 1.15 0.1 0.8 0.1 www.DataSheet4U.com 2.29 0.5 8 6.5 0.5 2.3 5.4 0.5 0.55 1.2 0.55 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm 0.2 0.1 0.3 0.1 DPAK (L)-(1) — Conforms 0.42 g ...
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... Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm (4.9) DPAK (S)-(1),(2) — Conforms 0. ...
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... Hitachi Code JEDEC EIAJ Mass (reference value January, 2001 Unit: mm (5.1) DPAK (S)-(3) — Conforms 0.28 g ...
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... Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 2SK1151(L)(S), 2SK1152(L)(S) Hitachi Asia Ltd. Hitachi Asia (Hong Kong) Ltd. Hitachi Tower Group III (Electronic Components) 16 Collyer Quay #20-00, 7/F., North Tower, Singapore 049318 World Finance Centre, Tel : < ...