K12A60U Toshiba Semiconductor, K12A60U Datasheet

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K12A60U

Manufacturer Part Number
K12A60U
Description
Search -----> TK12A60U
Manufacturer
Toshiba Semiconductor
Datasheet
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Handle with care.
Low drain-source ON-resistance
High forward transfer admittance
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Characteristics
= 90 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 3.0 to 5.0 V (V
= 25°C (initial), L = 0.84 mH, R
(Note 1)
(Note 1)
= 100 μA (V
(Note 2)
(Note 3)
(Ta = 25°C)
: R
: ⎪Y
Symbol
DS
V
TK12A60U
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
DS (ON)
AS
AR
stg
D
ch
DS
R
R
D
fs
= 600 V)
Symbol
th (ch-c)
th (ch-a)
⎪ = 7.0 S (typ.)
= 10 V, I
= 0.36 Ω (typ.)
-55 to 150
D
Rating
600
600
±30
150
3.5
12
24
35
69
12
= 1 mA)
1
G
Max
3.57
62.5
= 25 Ω, I
Unit
AR
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
= 12 A
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1: Gate
2: Drain
3: Source
1
www.DataSheet4U.com
2-10U1B
TK12A60U
SC-67
2009-09-29
Unit: mm
2
3

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K12A60U Summary of contents

Page 1

... 3 150 ° -55 to 150 °C stg Symbol Max Unit R 3.57 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK12A60U www.DataSheet4U.com Unit Gate 2: Drain 3: Source ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2009-09-29 ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 TK12A60U www.DataSheet4U.com Min Typ. Max ⎯ ...

Page 3

... Drain−source voltage Gate−source voltage V 10 Common source Tc = 25°C Pulse test 1 0.1 100 0.1 3 TK12A60U www.DataSheet4U.com I – Common source 25°C Pulse test 7 – Common source Tc = 25°C ...

Page 4

... rss Pulse test 0 −80 −40 100 (V) Case temperature Tc (°C) 500 V DS 400 300 200 100 0 160 0 4 Total gate charge Q 4 TK12A60U www.DataSheet4U.com − −0.3 −0.9 −1.2 −0.6 (V) DS − ...

Page 5

... Pulse width t w (s) 100 Channel temperature (initial) T 1000 ( −15 V TEST CIRCUIT = 25 Ω 0. TK12A60U www.DataSheet4U.com t T Duty = t (ch-c) = 3.57°C – 100 125 150 (° VDSS WAVEFORM ⎛ ...

Page 6

... Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK12A60U www.DataSheet4U.com 2009-09-29 ...

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