K2233 Toshiba Semiconductor, K2233 Datasheet - Page 2

• Manufacturer Part Number: K2233
• Description: Search -----> 2SK2233
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovered charge
Switching time
K 2233
Characteristics
Characteristics
※
Rise time
Turn−on time
Fall time
Turn−off time
Type
(Note 1)
(Note 1)
¦ Lot Number
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
C
I
|Y
C
C
Q
Q
GSS
DSS
I
DRP
V
Q
t
t
Q
DR
DSF
t
oss
on
off
t
t
rss
iss
rr
gs
gd
th
fs
r
f
rr
g
|
V
V
I
V
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
Month (starting from alphabet A)
Year
DR
= 10 mA, V
= 45 A, V
= 45 A, V
= 60 V, V
= 10 V, I
= 10 V, I
= 10 V, V
≈ 48 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
/ dt = 100 A / µs
(last number of the christian era)
D
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
GS
= 15 A
GS
Test Condition
Test Condition
= 1 mA
= 25 A
DS
= 25 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
—
D
= 45 A
Min
Min
0.8
60
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1800
Typ.
Typ.
350
900
130
0.1
40
22
27
20
30
40
60
40
20
90
—
—
—
—
—
—
—
2002-07-31
2SK2233
−1.8
Max
Max
±10
100
180
2.0
55
30
45
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
µA
µA
nC
µC
pF
ns
ns
V
V
S
A
A
V