K2003 Fuji Electric, K2003 Datasheet
K2003
Manufacturer Part Number
K2003
Description
Search -----> 2SK2003-01MR
Manufacturer
Fuji Electric
Datasheet
1.K2003.pdf
(3 pages)
www.DataSheet4U.com
2SK2003-01MR
N-CHANNEL SILICON POWER MOSFET
Item
DC-DC converters
Thermal characteristics
Low on-resistance
Avalanche-proof
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
High speed switching
No secondary breakdown
High voltage
Switching regulators
Maximum ratings and characteristics
Low driving power
V
UPS
General purpose power amplifier
Zero gate voltage drain current
Thermal resistance
Absolute maximum ratings ( Tc=25°C unless otherwise specified)
Item
Applications
Electrical characteristics (T
Features
(t
(t
GS
on
off
=t
=t
=±30V Guarantee
d(on)
d(off)
+t
+t
f
r
)
)
on
off
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
V
P
T
T
D
D(puls]
DR
D
ch
stg
GS
DS
R
R
I
Symbol
V
V
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
Symbol
GSS
AV
DSS
d(on)
d(off)
f
th(ch-a)
th(ch-c)
r
rr
fs
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
SD
rr
Rating
+150
-55 to +150
600
±30
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
V
L=100 µ H T
I
I
-di/dt=100A/ s T
16
40
D
D
D
D
D
F
F
CC
DS
GS
DS
GS
GS
channel to ambient
4
4
=4A
=2xI
=I
channel to case
=1mA
=1mA
=2A V
=2A V
DR
=600V
=300V R
= ±30V V
=25V
=10V
=0V
DR
V
GS
GS
DS
V
GS
=0V
=10V
=25V
ch
Test Conditions
V
V
V
=0V T
GS
DS
G
=25°C
DS
GS
=10
=0V
=V
=0V
=0V
ch
GS
=25°C
Unit
°C
°C
ch
V
A
A
A
V
W
=25°C
T
T
ch
ch
=25°C
=125°C
FAP-IIA SERIES
TO-220F15
JEDEC
EIAJ
FUJI POWER MOSFET
2.54
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
2.5
2
4
1000
Typ.
400
Typ.
10
10
85
20
20
15
45
15
3.0
0.2
2.0
4
1.1
2
SC-67
Source(S)
1500
Drain(D)
3. Source
Max.
500
100
130
Max.
62.5
30
30
25
70
25
3.125
3.5
1.0
2.4
1.65
Units
Units
°C/W
°C/W
V
V
µA
mA
nA
S
pF
ns
A
V
ns
C
1
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K2003 Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage www.DataSheet4U.com V =±30V Guarantee GS Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings ( Tc=25°C unless otherwise specified) ...
Page 2
... R DS(on DS(on GS(th 2SK2003-01MR On state resistance vs - 100 T [ ° Typical Drain-Source on state resistance vs Gate threshold voltage vs. T 5.0 4.0 3.0 2.0 1 ...
Page 3
... 1.0 1 2SK2003-01MR Typical input charge Allowable power dissipation vs 100 T [ ° Safe operating area ...