K2098 Fuji Electric, K2098 Datasheet
K2098
Manufacturer Part Number
K2098
Description
Search -----> 2SK2098
Manufacturer
Fuji Electric
Datasheet
1.K2098.pdf
(3 pages)
www.DataSheet4U.com
2SK2098-01MR
N-CHANNEL SILICON POWER MOSFET
Item
DC-DC converters
Thermal characteristics
Low on-resistance
High forward Transconductance
Avalanche-proof
Motor controllers
Drain-source voltage
Continuous drain current
Pulsed drain current
Continuous reverse drain current
Gate-source peak voltage
Max. power dissipation
Operating and storage
temperature range
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
High current
No secondary breakdown
Maximum ratings and characteristics
Low driving power
General purpose power amplifier
Zero gate voltage drain current
Thermal resistance
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Applications
Electrical characteristics (T
Features
(t
(t
on
off
=t
=t
d(on)
d(off)
+t
+t
f
r
)
)
on
off
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
V
P
T
T
D
D(puls]
DR
D
ch
stg
GS
DS
R
R
I
Symbol
V
V
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
Symbol
AV
DSS
GSS
d(on)
d(off)
f
th(ch-a)
th(ch-c)
r
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
rr
Rating
+150
-55 to +150
150
±20
V
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
L=100 µ H T
I
I
-di/dt=100A/ s T
D
D
D
D
D
F
F
20
80
20
50
DS
CC
GS
GS
DS
GS
=2xI
=I
=1mA
=1mA
=10A
=20A
=10A V
channel to ambient
channel to case
DR
=150V
=30V R
=10V
= ±20V V
=25V
=0V
DR
V
GS
V
DS
GS
=0V
ch
V
V
Test Conditions
G
V
=25V
=25°C
=0V T
GS
DS
=25
DS
GS
=V
=0V
=0V
=0V
ch
GS
=25°C
ch
Unit
°C
°C
V
A
A
A
V
W
=25°C
T
T
V
V
ch
ch
GS
GS
=25°C
=125°C
=10V
FAP-III SERIES
=4V
TO-220F15
JEDEC
EIAJ
FUJI POWER MOSFET
2.54
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
10
150
20
1.0
2300
330
150
450
100
125
Typ.
Typ.
10
10
20
15
20
1.5
0.2
0.065
0.055
1.00
0.6
SC-67
3450
Source(S)
Drain(D)
3. Source
500
100
500
230
700
150
Max.
Max.
62.5
25
30
2.5
2.5
1.0
0.100
0.080
1.50
Units
Units
°C/W
°C/W
V
V
µA
mA
nA
S
pF
ns
A
V
ns
C
1
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K2098 Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance www.DataSheet4U.com Avalanche-proof Applications Motor controllers General purpose power amplifier DC-DC converters Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage ...
Page 2
... DS(on DS(on GS(th 2SK2098-01MR On state resistance vs 0.2 0 100 T [ ° Typical Drain-Source on state resistance vs. I 0.5 0.4 0.3 0.2 0 Gate threshold voltage vs. T 3.0 2.0 1 100 T [ ° ...
Page 3
... 1.0 1 2SK2098-01MR Typical input charge 120 160 Allowable power dissipation vs 100 T [ ° Safe operating area ...