K3067 Toshiba Semiconductor, K3067 Datasheet - Page 2

• Manufacturer Part Number: K3067
• Description: Search -----> 2SK3067
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
V
V
(Tc = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
I
C
|Y
C
C
Q
GSS
Q
DRP
DRP
DSS
I
V
Q
Q
t
t
DSF
DR
t
oss
t
on
off
rss
t
iss
gd
rr
th
fs
r
gs
f
rr
g
|
V
I
V
I
V
V
V
V
V
t = 1 ms
t = 100
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= ±10 µA, V
= 2 A, V
= 2 A, V
= ±25 V, V
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, V
≈ 480 V, V
/ dt = 100 A / µs
µs
GS
GS
2
D
D
D
GS
(Tc = 25°C)
GS
DS
Test Condition
Test Condition
GS
= 1 mA
= 1 A
DS
= 1 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
D
= 2 A
Min
±30
600
Min
2.0
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Typ.
Typ.
380
120
4.2
1.7
5.0
40
15
25
20
80
—
—
—
—
—
—
—
—
—
9
5
4
2002-06-05
2SK3067
−1.5
Max
Max
±10
100
4.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
5
8
Unit
Unit
µC
µA
µA
pF
nC
ns
ns
Ω
V
V
V
S
A
A
A
V