TPCA8006-H Toshiba Semiconductor, TPCA8006-H Datasheet

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TPCA8006-H

Manufacturer Part Number
TPCA8006-H
Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number:
TPCA8006-H
Manufacturer:
TOSHIBA
Quantity:
1 912
Part Number:
TPCA8006-H
Manufacturer:
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Switching Regulator Applications
Motor Drive Applications
Maximum Ratings
Small footprint due to small and thin package
High speed switching
Low drain-source ON resistance
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
This transistor is an electrostatic sensitive device. Please handle with caution.
page.
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVII)
(Note 2a) (Note 4)
GS
DC
Pulsed (Note 1)
:
R
(Ta
DSS
DS (ON)
th
20 k )
(Tc=25℃)
(Note 2a)
(Note 2b)
(t
(t
= 3.0 to 5.0 V (V
(Note 1)
(Note 3)
TENTATIVE
= 100 µA (max) (V
10 s)
10 s)
25°C)
= 41 mO (typ.) (V
TPCA8006-H
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
P
P
P
DSS
GSS
DP
AR
I
A S
AR
stg
| = 15 S (typ.)
D
ch
D
D
D
DS
= 10 V, I
DS
G
= 100 V)
=10V, I
55 to 150
Rating
100
100
224
150
2.8
1.6
4.5
D
18
36
45
18
1
20
= 1 mA)
D
=9A)
Unit
mJ
mJ
W
W
W
°C
°C
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
1,2,3:SOURCE
5,6,7,8:DRAIN
S
8
1
8
1
1
8
1.27
4.25±0.2
7
2
0.05 S
5.0±0.2
TPCA8006-H
0.4±0.1
2-5Q1A
6
3
2004-03-08
4
5
?
?
5
4
0.8±0.1
0.05 M A
0.15±0.05
4:GATE
0.595
5
4
Unit: mm
A

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TPCA8006-H Summary of contents

Page 1

... 2.8 D (Note 2a 1.6 D (Note 2b) E 224 A S (Note 4 150 150 stg 1 TPCA8006-H 0.4±0.1 1. 5.0±0.2 0. 4.25±0.2 Unit 0.8±0.1 1,2,3:SOURCE V 5,6,7,8:DRAIN V JEDEC ? JEITA ? A TOSHIBA 2-5Q1A W Weight: 0.080 g (typ.) W ...

Page 2

... Year of manufacture (One low-order digits of calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 0.8 (Unit: mm) 0.8 mH, TPCA8006-H FR-4 25.4 25.4 0.8 (Unit: mm) (b) , 2004-03-08 ...

Page 3

... gs1 (Ta 25°C) Symbol Test Condition I DRP DSF TPCA8006-H Min Typ. Max 0 V 100 0 V 100 0 V 100 3.0 5 7.5 15 780 MHz 17 390 ( OUT (13) ...

Page 4

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 4 TPCA8006-H 000707EAA 2004-03-08 ...

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