TPCA8009-H Toshiba Semiconductor, TPCA8009-H Datasheet
TPCA8009-H
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TPCA8009-H Summary of contents
Page 1
... 150 °C ch −55 to 150 T °C stg 1 TPCA8009-H www.DataSheet4U.com Unit: mm 0.4±0.1 1.27 0. 0.15±0.05 4 0.595 1 A 5.0±0.2 0. 4.25±0 0.8±0 SOURCE 4 : GATE DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0 ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 2.78 °C/W th (ch-c) (Tc=25℃) R 44.6 °C/W th (ch-a) (Note 2a) R 78.1 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCA8009-H www.DataSheet4U.com FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2007-12-18 ...
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... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCA8009-H www.DataSheet4U.com Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ ⎯ 150 ⎯ ⎯ 150 ⎯ ⎯ 100 ⎯ 2.0 4.0 ⎯ ...
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... Drain-source voltage 1 Gate-source voltage V 10000 Common source Ta = 25° Pulse test 1000 100 10 100 0.1 Drain current I 4 TPCA8009-H www.DataSheet4U.com I – 6 – Common source Ta = 25°C ...
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... Drain-source voltage iss 3 C oss rss 0 −80 −40 100 Ambient temperature Ta (° TPCA8009-H www.DataSheet4U.com − −1.2 −0.8 −0.4 (V) DS − Common source = 1mA I D Pulse test ...
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... Curves must be derated linearly with increase in temperature. V DSS max 0 100 Drain-source voltage V ( – 0 100 Pulse width t ( 160 0 40 Case temperature Tc (°C) 1000 6 TPCA8009-H www.DataSheet4U.com (2) (1) (3) Single pulse 1000 P – 120 160 2007-12-18 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCA8009-H www.DataSheet4U.com 20070701-EN 2007-12-18 ...