TPCF8B01 Toshiba Semiconductor, TPCF8B01 Datasheet

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TPCF8B01

Manufacturer Part Number
TPCF8B01
Description
Multi-Chip Device Silicon P Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
TPCF8B01
Manufacturer:
TOSHIBA
Quantity:
47 000
Part Number:
TPCF8B01
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
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Notebook PC Applications
Portable Equipment Applications
Maximum Ratings
MOSFET (Ta
SBD (Ta
Maximum Ratings for MOSFET and SBD (Ta
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-model: V
Low forward voltage: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
Drain power
dissipation
(t
Drain power
dissipation
(t
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7), please refer to the next page.
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
5 s) (Note 2a) Single-device value at
5 s) (Note 2b) Single-device value at
Characteristics
25°C)
Characteristics
Characteristics
DC
Pulse
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
25°C)
GS
DSS
20 k )
FM
th
(Note 2a, 3b, 5)
= 0.5 to 1.2 V(V
= 0.46V(typ.)
= 10 ìA (max) (V
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(Note 4)
DS (ON)
TPCF8B01
fs
| = 4.7 S (typ.)
Symbol
Symbol
Symbol
V
V
V
I
P
P
P
P
V
I
F(AV)
E
E
T
= 72 mÙ (typ.)
I
I
FSM
T
RRM
DSS
DGR
GSS
D (1)
D (2)
D (1)
D (2)
DS
I
DP
AR
AR
stg
AS
D
ch
DS
= 10 V, I
= 20 V)
7(50Hz)
1
Rating
Rating
Rating
55~150
0.11
1.35
1.12
0.53
0.33
150
10.8
1.2
1.35
1.0
20
2.7
20
20
D
8
25°C)
= 200 ìA)
Unit
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
Marking (Note 7)
JEDEC
JEITA
TOSHIBA
8
1
8
1
1. Anode
2. Anode
3.Source
4. Gate
F8A
7
2
8. Cathode
5. Drain
6. Drain
7. Cathode
TPCF8B01
2003-04-08
6
3
Unit: mm
5
4
5
4

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TPCF8B01 Summary of contents

Page 1

... F(AV) I 7(50Hz) FSM 25°C) Symbol Rating P 1.35 D (1) (Note 3a) P 1.12 D (2) P 0.53 D (1) (Note 3a) P 0.33 D (2) T 150 ch T 55~150 stg 1 TPCF8B01 Unit Anode 5. Drain 2. Anode 6. Drain A 3.Source 7. Cathode 4. Gate 8. Cathode mJ JEDEC A JEITA mJ TOSHIBA Weight: 0.011 g (typ.) Circuit Configuration Unit ...

Page 2

... Note 7: Black round marking “●” locates on the left lower side of parts number marking “F8A” indicates terminal No. 1. Symbol Max Unit R 92.6 th (ch-a) (1) (Note 3a) °C/W R 111.6 th (ch-a) (2) R 235.8 th (ch-a) (1) (Note 3a) °C/W R 378.8 th (ch-a) (2) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (単位 t: mm) 0.5 mH =15V TPCF8B01 FR-4 25.4 25.4 0.8 (単位: mm) (b) 1.35 A 2003-04-08 ...

Page 3

... DRP DSF DR GS Symbol Test Condition V I 0.7 A FM( FM( RRM RRM MHz TPCF8B01 Min Typ. Max 200 A 0.5 1.2 0.7 A 215 300 1.4A 110 160 1 110 A 2.4 4.7 470 MHz 70 ...

Page 4

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 4 TPCF8B01 000707EAA 2003-04-08 ...

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