RF2119 RF Micro Devices, RF2119 Datasheet

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RF2119

Manufacturer Part Number
RF2119
Description
HIGH EFFICIENCY 2V POWER AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
RF2119
Manufacturer:
RFMD
Quantity:
20 000
Part Number:
RF2119FR
Manufacturer:
RF
Quantity:
20 000
Part Number:
RF2119TR13
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RFMD
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Product Description
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
Optimum Technology Matching® Applied
Rev A8 010720
Typical Applications
• Two-Way Pagers
• 915MHz ISM Band Equipment
• Spread-Spectrum Systems
Si BJT
Si Bi-CMOS
LMATCH
BIAS1
GND1
RF IN
GND
GND
GND
VCC
Functional Block Diagram
1
2
3
4
5
6
7
8
ü
GaAs HBT
SiGe HBT
PACKAGE BASE
CIRCUITS
BIAS
GND
2
Preliminary
GaAs MESFET
Si CMOS
16
15
14
13
12
11
10
9
BIAS2
NC
RF OUT
RF OUT
RF OUT
NC
NC
VPC
input and
• 3V AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• Personal Digital Cellular
4.90 ± 0.10
HIGH EFFICIENCY 2V POWER AMPLIFIER
Features
Ordering Information
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
8° MAX
0° MIN
• Single 2V to 5V Supply
• 30dBm Output Power at 2.5V
• 30dB Small Signal Gain
• 53% Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
RF2119
RF2119 PCBA
6.00 ± 0.20
0.60 ± 0.15
± 0.10
3.90
Package Style: PSSOP-16
High Efficiency 2V Power Amplifier
Fully Assembled Evaluation Board
0.24
0.20
0.25 ± 0.05
1.40 ± 0.10
0.635
-A-
0.05 ± 0.05 3
RF2119
http://www.rfmd.com
Fax (336) 664 0454
Tel (336) 664 1233
Exposed
Heat Sink
1.70 ± 0.10
2.70 ± 0.10
3
2-55
2

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RF2119 Summary of contents

Page 1

... The device is well suited for either CW or pulsed applications. At 3V, the RF2119 can deliver 29.5dBm of linear output power. The device is self-contained with 50 the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics ...

Page 2

... RF2119 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage Control Voltage ( Input RF Power 2 CW Dissipated Power Peak Dissipated Power Operating Case Temperature Storage Temperature Parameter Overall Usable Frequency Range Small Signal Gain Maximum CW Output Power Maximum Pulsed Output Power ...

Page 3

... PC I “ON” Current PC I “OFF” Current PC Power Supply Voltage Voltage 2.0 Current Total 700 Rev A8 010720 Specification Unit Typ. Max. 100 ns 0.5 V 2.2 2 2.5 V 5.0 V 900 1200 mA RF2119 Condition V =2.2V PC Standby, V =0.5V PC Specifications Operating Limits V =2.5V, V =2.2V =+3dBm, T=25° 2-57 2 ...

Page 4

... RF2119 Pin Function Description 1 GND Ground externally. 2 LMATCH Interstage tuning. This pin is internally DC blocked and will connect to a shunt inductor or microstrip line used for interstage tuning. Length from pin to via should be approximately 60mils for 915MHz and 75mils for 902MHz and 120mils for 836MHz. The lumped element equivalent is 1 ...

Page 5

... BIAS CIRCUITS PACKAGE BASE =3.5V 2 BIAS CIRCUITS PACKAGE BASE RF2119 OUT 5.6 pF VPC OUT 6 pF VPC 2-59 2 ...

Page 6

... RF2119 824MHz to 928MHz (V 2 60-120 mils L2 3 PCB mat'l: FR-4; Two Layer: (31 mils; w/plating) 2-60 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) Drawing 2119400 BIAS CIRCUITS 8 9 PACKAGE BASE ...

Page 7

... Preliminary Evaluation Board Layout Rev A8 010720 1.020” x 1.020” RF2119 2 2-61 ...

Page 8

... RF2119 2 2-62 Preliminary Rev A8 010720 ...

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