RF2311 RF Micro Devices, RF2311 Datasheet

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RF2311

Manufacturer Part Number
RF2311
Description
GENERAL PURPOSE AMPLIFIER
Manufacturer
RF Micro Devices
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF2311
Manufacturer:
RFMD
Quantity:
20 000
Product Description
The RF2311 is a general purpose, low cost low power RF
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as an easily cas-
cadable 50
amplification in wireless voice and data communication
products operating in frequency bands up to 1600MHz.
The gain flatness and high bandwidth make the device
suitable for many other applications as well. The device is
self-contained with 50
and no external DC biasing elements are required to
operate as specified.
Optimum Technology Matching® Applied
Rev C3 010228
Typical Applications
• General Purpose High Bandwidth Gain
• IF or RF Buffer Amplifiers
Si BJT
Si Bi-CMOS
Blocks
RF IN
GND
GND
VCC
1
2
3
4
Functional Block Diagram
gain block. Applications include IF and RF
ü
GaAs HBT
SiGe HBT
input and output impedances,
4
GaAs MESFET
Si CMOS
8
7
6
5
RF OUT
GND
GND
GND
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
Features
Ordering Information
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
• DC to well over 1600MHz Operation
• Internally Matched Input and Output
• 14dB Small Signal Gain
• 4.2dB Noise Figure
• +9dBm Output Power
• Single 2.7V to 6V Positive Power Supply
RF2311
RF2311 PCBA
.195
.191
GENERAL PURPOSE AMPLIFIER
Package Style: SOP-8
General Purpose Amplifier
Fully Assembled Evaluation Board
1
.022
.018
.240
.232
.156
.152
.008
.050
.017
RF2311
.056
.052
http://www.rfmd.com
.004
MIN
Fax (336) 664 0454
Tel (336) 664 1233
4-81
4

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RF2311 Summary of contents

Page 1

... General Purpose High Bandwidth Gain Blocks • Buffer Amplifiers Product Description The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cas- cadable 50 gain block ...

Page 2

... RF2311 Absolute Maximum Ratings Parameter Supply Voltage Input RF Power Operating Ambient Temperature Storage Temperature Parameter Overall 4 Frequency Range Gain Noise Figure Input VSWR Output VSWR Output IP 3 Saturated Output Power Reverse Isolation Power Supply Operating Voltage Operating Current Range 4-82 Rating Unit -0 ...

Page 3

... L should be large enough to present a high impedance at the lowest operating frequency, and the R should 8mA and 20mA). Rev C3 010228 - 2. where I is the desired device current (between RF2311 Interface Schematic See pin 8. See pin 8. 4 VCC RF OUT ...

Page 4

... RF2311 V 100 4-84 Application Schematic 5V Supply Voltage = Application Schematic 2.7V Supply Voltage OUT 2 100 OUT Rev C3 010228 ...

Page 5

... Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1-1 VCC strip SMA J1 Rev C3 010228 P1 H3M P1-1 1 VCC 2 GND 330 pF Drawing 2311400 Rev B RF2311 OUT 50 strip SMA J2 4-85 4 ...

Page 6

... RF2311 4 4-86 Evaluation Board Layout 2” x 2” Rev C3 010228 ...

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