HSC1959SP Hi-Sincerity Mocroelectronics, HSC1959SP Datasheet

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HSC1959SP

Manufacturer Part Number
HSC1959SP
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HSC1959SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1959Y is designed for audio frequency Low power amplifier applications.
Features
Absolute Maximum Ratings
Characteristics
HSC1959SP
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ...................................................................................... 150 C Maximum
Total Power Dissipation (Ta=25 C) ................................................................................ 500 mW
VCBO Collector to Base Voltage ......................................................................................... 35 V
VCEO Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 500 mA
Execellent hFE linearity
Complementary to HSA562
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VBE(on)
BVCBO
BVCEO
Symbol
*hFE1
*hFE2
ICBO
IEBO
Cob
fT
Min.
120
35
30
40
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
300
7
-
-
-
-
-
-
-
-
Max.
0.25
100
100
240
1
-
-
-
-
-
MHz
Unit
nA
nA
pF
V
V
V
V
*Pulse Test: Pulse Width 380us, Duty Cycle 2%
IC=100uA
IC=1mA
VCB=35V
VEB=5V
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=20mA, VCE=6V
IE=0, VCB=6V, f=1MHz
Test Conditions
Spec. No. : HSP200203
Issued Date : 1998.01.06
Revised Date : 2002.03.04
Page No. : 1/3
HSMC Product Specification

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HSC1959SP Summary of contents

Page 1

... VCBO Collector to Base Voltage ......................................................................................... 35 V VCEO Collector to Emitter Voltage ...................................................................................... 30 V VEBO Emitter to Base Voltage .............................................................................................. Collector Current ....................................................................................................... 500 mA Characteristics (Ta=25 C) Symbol Min. BVCBO 35 BVCEO 30 ICBO - IEBO - *VCE(sat) - *VBE(on) - *hFE1 120 *hFE2 Cob - HSC1959SP Typ. Max. Unit - - 100 nA - 100 240 - - 300 - ...

Page 2

... Collector Current-I Saturation Voltage & Collector Current 1000 =10I CE(sat 100 125 Collector Current-I HSC1959SP 1000 100 10 100 1000 (mA) C 1000 100 100 1000 (mA) C Spec. No. : HSP200203 Issued Date : 1998.01.06 Revised Date : 2002.03.04 Page No. : 2/3 Current Gain & ...

Page 3

... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSC1959SP ...

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