HSC3953S Hi-Sincerity Mocroelectronics, HSC3953S Datasheet
HSC3953S
Manufacturer Part Number
HSC3953S
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
1.HSC3953S.pdf
(3 pages)
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HSC3953S-C
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HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amplifier
applications.
Features
Absolute Maximum Ratings
Characteristics
Classification of hFE1
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ..................................................................................... 150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 900 mW
VCBO Collector to Base Voltage ...................................................................................... 120 V
VCEO Collector to Emitter Voltage ................................................................................... 120 V
VEBO Emitter to Base Voltage ............................................................................................. 3 V
IC Collector Current ...................................................................................................... 200 mA
Icp Peak Collector Current ............................................................................................ 400 mA
*VBE(sat)
High fT: fT=500MHz
High breakdown voltage: VCEO=120V min
Small reverse transfer capacitance
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
Range
ICBO
IEBO
Rank
Cob
fT
Min.
120
120
60
40
60-120
3
-
-
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
D
Typ.
160
400
2.1
-
-
-
-
-
-
-
-
100-200
E
Max.
320
0.1
0.1
1
1
-
-
-
-
-
-
160-320
F
MHz
Unit
uA
uA
pF
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=10uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VEB=2V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA,
IE=0, VCB=30V, f=1MHZ
Test Conditions
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 1/3
HSMC Product Specification
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HSC3953S Summary of contents
Page 1
... HI-SINCERITY MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amplifier applications. Features High fT: fT=500MHz High breakdown voltage: VCEO=120V min Small reverse transfer capacitance Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ..................................................................................... 150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...
Page 2
HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 V 100 10 0 Collector Current (mA) Saturation Voltage & Collector Current 1000 100 0 Collector Current (mA) Safe Operating Area 1000 P =1ms T ...
Page 3
HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...