BTA15 Sirectifier Semiconductors, BTA15 Datasheet
BTA15
Manufacturer Part Number
BTA15
Description
Discrete Triacs Non-isolated/isolated
Manufacturer
Sirectifier Semiconductors
Datasheet
1.BTA15.pdf
(4 pages)
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ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
V
(dI/dt)c (2) Without snubber
SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants)
dV/dt (2)
DSM
Symbol
I
Symbol
I
GT
P
I
T(RMS)
V
V
H
I
dI/dt
G(AV)
T
I
TSM
I
GD
GT
GM
L
I
T
(2)
stg
²
/V
(1)
t
j
RSM
G
V
V
I
I
V
T
G
D
D
D
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate p ower diss ipation
Storage junction temperature range
Operating junction temperature range
²
G
= 500 mA
= 1.2 I
T2
t Value for fusing
T1
= 12 V
= V
= 67 % V
= 2 x I
DRM
GT
GT
Test Conditions
R
DRM
T1
, tr < 100 ns
Discrete Triacs(Non-Isolated/Isolated)
T2
L
R
G
= 3.3 k
L
_
= 33
gate open Tj = 125°C
Tj = 125°C
Dimensions TO-220AB
Tj = 125°C
BTB/BTA15
Parameter
Quadrant
I - II - III
I - II - III
I - II - III
I - III
II
F = 120 Hz
TO-220AB
tp = 10 ms
tp = 20 µs
F = 60 Hz
F = 50 Hz
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
tp = 10 ms
Tc = 100°C
t = 16.7 ms
Tj = 125°C
Tj = 125°C
Tj = 125°C
Dim.
t = 20 ms
Tj = 25°C
C
D
G
H
M
N
Q
R
A
B
E
F
K
J
500
CW
8.5
35
35
50
60
0.100
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.025
0.170
0.045
0.014
0.110
0.090
Min.
BTA/BTB
Inches
1.3
0.2
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
0.190
0.055
0.022
0.110
Max.
BSC
- 40 to + 150
- 40 to + 125
V
DRM
Value
+ 100
1000
168
160
144
15
50
BW
80
50
4
1
50
70
14
/V
12.70
14.73
Min.
2.54
9.91
3.54
5.85
2.54
1.15
2.79
0.64
4.32
1.14
0.35
2.29
RRM
Milimeter
13.97
16.00
10.66
Max.
BSC
4.08
6.85
3.18
1.65
5.84
1.01
4.82
1.39
0.56
2.79
Unit
A/µs
A/ms
Unit
V/µs
A
°C
mA
mA
mA
W
A
A
A
V
V
V
²
s
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BTA15 Summary of contents
Page 1
... I = 500 1 dV/dt ( gate open Tj = 125°C D DRM (dI/dt)c (2) Without snubber BTB/BTA15 Dimensions TO-220AB Parameter TO-220AB 120 µs Quadrant III MAX III MAX III Tj = 125°C MIN. ...
Page 2
... II MIN 125°C MIN. Test Conditions Tj = 25° 125° 125° 25° 125°C Parameter Voltage (xxx) Sensitivity ~~ 200 V 1000 Marking Weight BTB/BTA15 2.3 g Value Unit 50 mA 100 1 120 V/µs 400 10 V/µs Value Unit MAX ...
Page 3
... 180 160 140 120 Non repetitive T j initial=25°C 100 80 R epetitive 60 T c=85° Number of cycles 100 BTB/BTA15 F ig. 2- on-s tate current vers us cas e temperature (full cycle ig. ...
Page 4
... S pec ified (dI/dt)c 2.0 1 1.6 B 1.4 1.2 1.0 0.8 0.6 (dV /dt)c (V /µ 0.4 0.1 1.0 10.0 BTB/BTA15 F ig elative va riation of gate trigger current, with width holding current and la tching current versus junction temperature (typical va lues ). IG T,IH, T,IH,IL [T j=25° 2 initial=25°C 2 1.5 IH & 0.5 I²t 0.0 -40 -20 ...