... V RSM V V DSM V STT130GK08 900 800 STT130GK12 1300 1200 STT130GK14 1500 1400 STT130GK16 1700 1600 STT130GK18 1900 1800 Test Conditions t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, I ...
... DC current R thJK per module Creeping distance on surface d S Strike distance through air d A Maximum allowable acceleration a FEATURES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ STT130 DRM o =125 = =- = =-40 C ...
... Fig. 1 Surge overload current Fig Crest value, t: duration TSM FSM Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode STT130 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature STT130 ...
... MTC130 Thyristor-Thyristor Modules 3 x STT130 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R for various conduction angles d: thJC d R (K/W) thJC DC 0.230 o 180 C 0.244 o 120 C 0.255 0.283 ...