STP4NC60A ST Microelectronics, Inc., STP4NC60A Datasheet

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STP4NC60A

Manufacturer Part Number
STP4NC60A
Description
N-channel 600V 1.8 Ohm 4.2A TO-220/TO-220FP/I2PAK Powermesh ii MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)I
July 2001
STP4NC60A
STP4NC60AFP
STB4NC60A-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
SD
Symbol
dv/dt(1)
I
V
DM
P
V
V
V
T
DGR
I
I
TOT
T
ISO
stg
4.2A, di/dt 300A/µs, V
DS
GS
D
D
TYPE
j
( )
N-CHANNEL 600V - 1.8
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 1.8
600V
600V
600V
V
II is the evolution of the first
DSS
DD
V
(BR)DSS
R
< 2
< 2
< 2
DS(on)
C
Parameter
™.
GS
= 25°C
, T
GS
= 20 k )
j
The layout re-
= 0)
T
JMAX.
C
C
= 25°C
= 100°C
STP4NC60A - STP4NC60AFP
4.2A
4.2A
4.2A
I
D
- 4.2A TO-220/TO-220FP/I
(*)Limited only by maximum Temperature allowed
TO-220
INTERNAL SCHEMATIC DIAGRAM
STP(B)4NC60A(-1)
PowerMesh™II MOSFET
16.8
100
4.2
2.6
0.8
3.5
-
(Tabless TO-220)
STB4NC60A-1
–60 to 150
Value
600
600
±30
STP4NC60AFP
1 2
16.8(*)
3
4.2(*)
2.6(*)
2500
0.28
3.5
35
TO-220FP
2
PAK
W/°C
Unit
V/ns
°C
1
W
V
V
V
A
A
A
V
1/10
2
3

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STP4NC60A Summary of contents

Page 1

... Insulation Withstand Voltage (DC) ISO T Storage Temperature stg T Max. Operating Junction Temperature j (•)Pulse width limited by safe operating area (1)I 4.2A, di/dt 300A/µ (BR)DSS July 2001 STP4NC60A - STP4NC60AFP - 4.2A TO-220/TO-220FP DS(on) D < 2 4.2A < 2 4.2A < 2 4.2A TO-220 ™. The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter ...

Page 2

... STP4NC60A/FP/STB4NC60A-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... G GS (see test circuit, Figure 5) Test Conditions I = 4.2A 4A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) 2 PAK Safe Operating Area for TO-220FP STP4NC60A/FP/STB4NC60A-1 Min. Typ. Max 16.5 21.1 2.5 9 Min. Typ. Max Min. Typ. Max. 4.2 16.8 1 ...

Page 4

... STP4NC60A/FP/STB4NC60A-1 Thermal Impedance for TO-220/I Output Characteristics Transconductance 4/10 2 PAK Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics STP4NC60A/FP/STB4NC60A-1 Capacitance Variations Normalized On Resistance vs Temperature 5/10 ...

Page 6

... STP4NC60A/FP/STB4NC60A-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia STP4NC60A/FP/STB4NC60A-1 MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 inch TYP. MAX. 0.181 0.051 ...

Page 8

... STP4NC60A/FP/STB4NC60A-1 DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/10 TO-220FP MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 inch TYP. MAX. 0.181 ...

Page 9

... TO-262 (I mm DIM. MIN. TYP. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3.48 L2 1.27 L2 STP4NC60A/FP/STB4NC60A-1 2 PAK) MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 2.7 0.094 10.4 0.393 13.6 0.515 3.78 0.137 1.4 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 ...

Page 10

... STP4NC60A/FP/STB4NC60A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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