STP21N05L ST Microelectronics, Inc., STP21N05L Datasheet

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STP21N05L

Manufacturer Part Number
STP21N05L
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet

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0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
July 1993
STP21N05L
STP21N05LFI
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
DM
V
V
V
P
T
DGR
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
LOW THRESHOLD POWER MOS TRANSISTOR
V
50 V
50 V
= 0.065
DSS
< 0.085
< 0.085
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
21 A
14 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP21N05L
TO-220
0.53
21
14
84
80
1
-65 to 175
2
Value
STP21N05LFI
3
175
50
50
15
STP21N05L
STP21N05LFI
ISOWATT220
2000
0.23
14
84
35
9
1
W/
2
Unit
o
o
W
V
V
V
A
A
A
V
3
C
C
o
1/10
C

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STP21N05L Summary of contents

Page 1

... N - CHANNEL ENHANCEMENT MODE I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STP21N05L STP21N05LFI TO-220 ISOWATT220 Value STP21N05L STP21N05LFI 0.53 0.23 2000 -65 to 175 175 Unit ...

Page 2

... STP21N05L/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width limited Single Pulse Avalanche Energy AS o (starting ...

Page 3

... Test Conditions di/dt = 100 150 (see test circuit, figure 5) Safe Operating Areas STP21N05L/FI Min. Typ. Max. Unit 370 530 ns 130 Min. Typ. Max. ...

Page 4

... STP21N05L/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

... Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP21N05L/FI 5/10 ...

Page 6

... STP21N05L/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit STP21N05L/FI 7/10 ...

Page 8

... STP21N05L/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2.95 15.75 6.6 3.93 3.85 L2 Dia inch MIN. TYP. 0.173 0.048 0.094 0.050 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.511 0.104 0.600 0.244 0.137 0.147 ...

Page 9

... MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.015 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16.4 0.626 9.3 0.354 3.2 0.118 STP21N05L/FI inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 0.630 1.204 0.417 0.645 0.366 0.126 P011G 9/10 ...

Page 10

... STP21N05L/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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