GT35J321 Toshiba, GT35J321 Datasheet

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GT35J321

Manufacturer Part Number
GT35J321
Description
Fourth Generation IGBT
Manufacturer
Toshiba
Datasheet

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Fourth-generation IGBT
Current Resonance Inverter Switching Applications
Absolute Maximum Ratings
Thermal Characteristics
Equivalent Circuit
Collector−emitter voltage
Gate−emitter voltage
Collector current (DC)
Collector current (pulse)
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance (IGBT)
Thermal resistance (diode)
Enhancement mode
High speed: t
Low saturation voltage: V
FRD included between emitter and collector
Toshiba package name: TO-3P(N)IS
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Gate
Characteristics
Characteristics
f
= 0.19 μs (typ.) (I
@ Tc = 100°C
@ Tc = 100°C
@ Tc = 25°C
@ Tc = 25°C
Collector
Emitter
Pulse
DC
CE (sat)
C
= 50 A)
= 1.9 V (typ.) (I
(Ta = 25°C)
Symbol
Symbol
R
R
V
V
T
th (j-c)
th (j-c)
GT35J321
I
I
P
GES
CES
I
CP
I
FP
T
stg
C
F
C
j
−55 to 150
C
Rating
= 50 A)
Max
1.67
600
±25
100
150
3.2
18
37
20
40
30
75
1
Marking
GT35J321
TOSHIBA
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
Weight: 5.8 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1. GATE
2. COLLECTOR
3. EMITTER
2-16F1A
GT35J321
2008-03-26
Unit: mm

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GT35J321 Summary of contents

Page 1

... R 3.2 th (j-c) Marking 1 Unit GATE 2. COLLECTOR A 3. EMITTER A JEDEC JEITA W TOSHIBA °C Weight: 5.8 g (typ.) °C Unit °C/W °C/W TOSHIBA GT35J321 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. GT35J321 Unit: mm ⎯ ⎯ 2-16F1A 2008-03-26 ...

Page 2

... −100 A / μ 90 90 (off off 2 GT35J321 Min Typ. Max = 0 V ― ― ±500 = 0 V ― ― 1.0 3.0 ― 6.0 ― 1.9 2.3 ― 2500 ― ― 0.24 ― ― 0.33 ― ― 0.19 0.32 (Note 1) ― ...

Page 3

... C CE 100 10 Common emitter Tc = 25° Collector-emitter voltage V CE (V) I – 100 Common emitter 125°C − Gate-emitter voltage V GE (V) GT35J321 2008-03-26 ...

Page 4

... ± 25° off 0 0. Collector current I (A) C Reverse Bias SOA 1000 T j ≤ 125° Ω 100 100 1000 Collector-emitter voltage V CE GT35J321 C ies C oes C res 1000 ( 10000 (V) 2008-03-26 ...

Page 5

... A/μ 25° Forward current I ( – di/ Common collector 200 25° 100 120 160 di/dt (A/μs) GT35J321 500 300 100 200 2008-03-26 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT35J321 20070701-EN GENERAL 2008-03-26 ...

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