SGM2014 Sony Corporation, SGM2014 Datasheet
SGM2014
Available stocks
Related parts for SGM2014
SGM2014 Summary of contents
Page 1
... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers ...
Page 2
... 10mA 1.5V G2S 900MHz G1S = 0V 15 –0.3V 10 –0.6V –0.9V 5 –1.2V –1. –2.0 – 2 – SGM2014AM (Ta = 25°C) Min. Typ. Max. 50 –8 – –2.5 –2 0 1 G1S = 5V) DS –1.5 –1.0 –0.5 V – ...
Page 3
... Gate 1 to source voltage [V] G1S Ga vs. V G1S ( 900MHz 1.5V G2S –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0 – Gate 1 to source voltage [V] G1S NF 1.5V 10mA) DS G2S D Ga NFmin 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 f – Frequency [GHz] SGM2014AM V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1.0V 0 1.0V 0.5V 0 2.0 2.2 ...
Page 4
... SGM2014AM (Z = 50Ω) 0 ANG –1.9 –4.0 –6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 –31.4 –33.9 –36.9 –39.5 –42.4 –45.0 ...
Page 5
... Package Outline Unit 0. 0.1 0.4 – 0.05 ( 0.95 ) SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.1 0.6 – 0.05 ( 0.85 ) 1.8 M-254 PACKAGE MASS – 5 – SGM2014AM + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 1. Source 2. Gate1 3. Gate2 4. Drain 0.01g ...