SGM2014 Sony Corporation, SGM2014 Datasheet - Page 2

• Manufacturer Part Number: SGM2014
• Description: GaAs N-channel Dual Gate MES FET
• Manufacturer: Sony Corporation

Electrical Characteristics
Typical Characteristics (Ta = 25°C)
Drain cut-off current
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off voltage
Gate 2 to source cut-off voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
Associated gain
40
30
20
10
0
0
(V
G2S
1
V
= 1.5V)
DS
Item
– Drain to source voltage [V]
2
I
D
vs. V
3
DS
4
I
I
I
I
V
V
gm
Ciss
Crss
NF
Ga
DSX
G1SS
G2SS
DSS
5
Symbol
G1S
G2S
(OFF)
(OFF)
6
–0.3V
–0.6V
–0.9V
–1.2V
–1.5V
V
= 0V
G1S
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
V
f = 1kHz
V
I
V
f = 1MHz
V
I
V
f = 900MHz
D
D
D
D
D
DS
G1S
G2S
G1S
G2S
DS
G2S
G1S
DS
DS
G1S
G2S
DS
G2S
DS
G1S
DS
G2S
DS
G2S
DS
G2S
= 100µA
= 100µA
= 10mA
= 10mA
= 10mA
– 2 –
= 12V
= 0V
= 0V
= 5V
= 5V
= 5V
= 5V
= 5V
= 5V
= –4V
= 0V
= –4.5V
= 0V
= –4.5V
= 0V
= 0V
= 0V
= 0V
= 0V
= 1.5V
= 1.5V
=1.5V
Condition
25
20
15
10
5
0
–2.0
(V
DS
V
= 5V)
G1S
–1.5
– Gate 1 to source voltage [V]
Min.
13
15
8
I
D
vs. V
–1.0
Typ.
G1S
0.9
1.5
17
25
18
–0.5
Max.
–2.5
–2.5
2.5
50
–8
–8
28
50
2
(Ta = 25°C)
SGM2014AM
0
unit
mA
ms
V
= 1.5V
1.0V
0.5V
0V
–0.5V
–1.0V
–1.5V
µA
µA
µA
pF
dB
dB
fF
V
V
G2S