SSM3J01T Toshiba Semiconductor, SSM3J01T Datasheet
SSM3J01T
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SSM3J01T Summary of contents
Page 1
... V V GSS -1 -3.4 (Note2 1250 mW (Note1) °C T 150 ch -55~150 °C T stg and the drain power dissipation P th (ch-a) Equivalent Circuit SSM3J01T Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) vary according to the D 2002-01-16 ...
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... OUT = 4 D.U. < < (c) V OUT COMMON SOURCE 25°C DS requires higher voltage than V GS (on) < V < (off (on) 2 SSM3J01T Min Typ. Max = 0 ¾ ¾ ±1 -30 ¾ ¾ ¾ ¾ -1 -0.6 ¾ -1.1 ¾ (Note3) 1.2 2.3 ¾ (Note3) 0.3 0.4 ¾ ...
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... Common Source -0.85 A 0.8 0.6 0.4 0 Ambient temperature Ta (°C) 1000 100 10 Common Source MHz Ta = 25°C 1 -10 -0.1 -1 Drain-Source voltage V 3 SSM3J01T I – -25°C 25°C -1.5 -2 -2.5 -3 (V) GS – (ON -2 100 150 C – iss C oss C rss ...
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... Drain-Source voltage V r – Single pulse Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 mm 0 Pulse width tw (s) 4 SSM3J01T P – Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 mm ） 100 125 150 Safe operating area 1 ms* ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 SSM3J01T 000707EAA 2002-01-16 ...