SSM3J13T Toshiba Semiconductor, SSM3J13T Datasheet
SSM3J13T
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SSM3J13T Summary of contents
Page 1
... V DS ±8 V GSS -3 -6.0 (Note 1.25 W (Note 1) °C T 150 ch -55~150 °C T stg Equivalent Circuit and the drain power dissipation P th (ch-a) 1 SSM3J13T JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) vary according to D 2002-03-27 Unit: mm ...
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... OUT D.U. < < COMMON SOURCE ( 25°C OUT requires higher voltage than V GS (on < V < (off SSM3J13T Min Typ ¾ ¾ -12 ¾ ¾ ¾ ¾ -0.45 ¾ ¾ (Note 3) 3 (Note 3) ¾ -2.5 V ¾ ...
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... V -10 -1 -0.1 -0. Gate-Source voltage V GS (V) 500 400 300 200 100 Gate-Source voltage V GS (V) 100 10 1 0.1 -0.01 125 150 3 SSM3J13T I – 75° 25°C -25°C -0 – (ON) GS Common Source -1 25° – ...
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... Common Source 25° -10 0 Drain-Source voltage V DS (V) 2 ） 125 150 4 SSM3J13T C – Common Source MHz Ta = 25°C Ciss Coss Crss Drain-Source voltage V DS (V) I – ...
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... Ta = 25°C V DSS Curves must be derated linearly with increase in max temperature. -0.01 -0.1 -1 -10 Drain-Source voltage V (V) DS 1000 Single pulse Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 mm ) 100 10 1 0.1 0.0001 0.001 -100 r – 0.01 0 Pulse width tw (s) 5 SSM3J13T 100 1000 2002-03-27 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 SSM3J13T 000707EAA 2002-03-27 ...