SSM3J14T Toshiba Semiconductor, SSM3J14T Datasheet
SSM3J14T
Available stocks
Related parts for SSM3J14T
SSM3J14T Summary of contents
Page 1
... V DS ± GSS -2 -5.4 (Note 1. (Note 1) 0.7 °C T 150 ch -55 to 150 °C T stg 2 ) Equivalent Circuit and the drain power dissipation P th (ch-a) 1 SSM3J14T Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ.) vary according to the D 2002-04-17 ...
Page 2
... W G D.U. < < Common source ( 25°C OUT requires higher voltage than V GS (on < V < (off SSM3J14T Min Typ ¾ ¾ -30 ¾ -15 ¾ ¾ ¾ -0.8 ¾ ¾ (Note 3) 2.0 = -10 V (Note 3) ¾ -4.5 V (Note 3) ¾ ...
Page 3
... Gate-source voltage V GS (V) 1000 100 Gate-source voltage -4.5 V 0.3 -10 V 0.1 0.03 125 150 -0.01 3 SSM3J14T I – 25°C 100°C -25° – (ON) GS Common source -1.35 A 25° 100°C -25°C -5 -10 -15 - – I ...
Page 4
... Drain-source voltage V DS (V) -3 Common source 25° - 0.2 Drain-source voltage V DS ( Ambient temperature Ta (°C) 4 SSM3J14T C – Common source MHz Ta = 25°C Ciss Coss Crss -10 -15 -20 -25 -30 -35 I – 0.4 0.6 ...
Page 5
... Ta = 25°C -0.3 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 Pad: 645 Single pulse Ta = 25°C -0.03 Curves must be derated linearly with increase in temperature. -0.01 -0.1 -0 -10 Drain-source voltage V ( – 0 Pulse width t ( ms* V DSS max -30 -100 5 SSM3J14T 100 1000 2002-04-17 ...
Page 6
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 SSM3J14T 000707EAA 2002-04-17 ...