SSM3J15F Toshiba Semiconductor, SSM3J15F Datasheet

no-image

SSM3J15F

Manufacturer Part Number
SSM3J15F
Description
Field-Effect Transistor Silicon P-Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSM3J15FS
Manufacturer:
TOSHIBA
Quantity:
30 000
Part Number:
SSM3J15FS
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
SSM3J15FS TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
SSM3J15FS(TE85L
Manufacturer:
TOSHIBA
Quantity:
6 953
Part Number:
SSM3J15FS(TE85L
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
SSM3J15FU
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
SSM3J15FU(TE85L
Manufacturer:
TOS
Quantity:
8 122
Part Number:
SSM3J15FU(TE85L,F)
Manufacturer:
RENESAS
Quantity:
2 621
Part Number:
SSM3J15FV
Manufacturer:
SONY
Quantity:
120
Part Number:
SSM3J15FV
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
www.DataSheet4U.com
High Speed Switching Applications
Analog Switch Applications
Maximum Ratings
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
Small package
Low ON resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
1
Characteristics
D Q
3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2
: R
: R
DC
Pulse
(Ta = 25°C)
on
on
= 12 Ω (max) (@V
= 32 Ω (max) (@V
Equivalent Circuit
Symbol
SSM3J15F
V
V
T
I
T
P
GSS
I
DP
DS
stg
D
ch
D
1
GS
GS
= −4 V)
= −2.5 V)
−55~150
3
Rating
−100
−200
−30
±20
200
150
1
(top view)
2
Unit
mW
mA
°C
°C
V
V
Weight: 0.012g(typ.)
JEDEC
JEITA
TOSHIBA
S-MINI
1
2
TO-236MOD
1.5-0.15
1.Gate
2.Source
3.Drain
2.5-0.3
SSM3J15F
+0.25
2-3F1F
+0.5
SC-59
2004-5-06
3
Unit: mm

Related parts for SSM3J15F

SSM3J15F Summary of contents

Page 1

... V DS ±20 V GSS −100 −200 Pulse 200 D T 150 ch −55~150 T stg Equivalent Circuit (top view SSM3J15F +0.5 2.5-0.3 +0.25 1.5-0. Unit 1.Gate °C 2.Source 3.Drain °C S-MINI JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012g(typ.) 2 Unit 2004-5-06 ...

Page 2

... GS t off ( OUT ( OUT requires higher voltage than V GS (on) < (off) recommended voltage of −2 higher to turn on this GS 2 SSM3J15F Test Condition MIN. TYP ⎯ ⎯ −30 ⎯ ⎯ ⎯ −0.1 mA −1.1 ⎯ −10 mA ⎯ ...

Page 3

... VGS=-2.3V -1 -1.5 -2 Common Source Ta=25°C -4V -100 -1000 VGS=-2.5V,ID=-1mA -4V,-10mA 50 75 100 125 150 3 SSM3J15F ID - VGS -1000 Common Source VDS=-3V -100 Ta=100°C -10 25°C -1 -25°C -0.1 -0. Gate-Source Voltage VGS(V) RDS(ON) - VGS 20 18 Source Common ID= -1mA Ta=100° ...

Page 4

... Drain current ID (mA VDS Common Source VGS=0V f=1MHz Ta=25°C Ciss Coss Crss -1 -10 -100 100 120 140 160 4 SSM3J15F IDR - VDS -250 Common Source VGS=0V -200 Ta=25°C -150 -100 - 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS ( 10000 Common Source ...

Page 5

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 SSM3J15F 030619EAA 2004-5-06 ...

Related keywords