SSM3J16FV Toshiba Semiconductor, SSM3J16FV Datasheet

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SSM3J16FV

Manufacturer Part Number
SSM3J16FV
Description
Field-Effect Transistor Silicon P-Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet

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High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
Marking
Handling Precaution
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
Small package
Low on-resistance
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Total rating, mounted on FR4 board
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
Characteristics
D T
0.5mm
3
0.4mm
: R
: R
: R
0.45mm
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
DC
Pulse
0.45mm
on
on
on
2
= 8 Ω (max) (@V
= 12 Ω (max) (@V
= 45 Ω (max) (@V
P
(Ta = 25°C)
SSM3J16FV
D
Symbol
V
(Note 1)
V
T
I
T
GSS
I
DP
DS
stg
D
ch
GS
Equivalent Circuit
GS
GS
1
= −4 V)
= −2.5 V)
= −1.5 V)
−55~150
Rating
−100
−200
2
−20
±10
150
150
1
× 3)
3
2
Unit
mW
mA
°C
°C
V
V
(top view)
Weight :1.5mg
JEDEC
JEITA
TOSHIBA
VESM
1
2
1.2±0.05
0.8±0.05
SSM3J16FV
1. Gate
2. Source
3. Drain
2-1L1B
2007-11-01
3
Unit: mm

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SSM3J16FV Summary of contents

Page 1

... DS ±10 V GSS −100 I D −200 (Note 1) 150 D T 150 ch −55~150 T stg 2 × 3) Equivalent Circuit SSM3J16FV 1.2±0.05 0.8±0.05 Unit °C °C 1. Gate VESM 2. Source 3. Drain JEDEC JEITA TOSHIBA 2-1L1B Weight :1.5mg (top view) 2 2007-11-01 Unit ― ...

Page 2

... −2 off ( OUT OUT requires a higher voltage than V GS (on) . (The relationship can be established as follows SSM3J16FV MIN. TYP ⎯ ⎯ −20 ⎯ ⎯ ⎯ −0.1 mA −0.6 ⎯ = −10 mA ⎯ −4 V ⎯ ...

Page 3

... -1 -1.5 -2 – -2 -100 -1000 (mA) D – Ta -2.5 V, -10mA -4V, -10mA 50 75 100 125 150 3 SSM3J16FV I – -1000 Common Source -100 Ta = 100°C -10 25°C −25°C -1 -0.1 -0. Gate - Source voltage VGS (V) R – (ON) ...

Page 4

... DS Common Source MHz Ta = 25°C C iss C oss C rss -10 -100 – Ta Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3 80 100 120 140 160 4 SSM3J16FV I – -250 Common Source 25°C -200 -150 S -100 - 0.2 0.4 0.6 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J16FV 20070701-EN GENERAL 2007-11-01 ...

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